156B913F01 THINKISEMI | Alldatasheet

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※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Excitation ※ High power drives/Medium traction applications Mechanical Data ※ Case: Hermetic metal cases with ceramic insulators ※ Polarity: Stud cathode and stud anode version Suffix "F01" =normal polarity (bottom stud cathode) ※ Mounting position: Any Suffix "F02"=reverse polarity (bott om stud anode) Min T yp eM a x IF(AV) Maximum average forward current at case temperature 300 500 A IF(RMS) Maximum RMS forward current 470 785 A VRRM Repettive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM=VDRM&VRRM +200V 150 800 2500/ 3000 V IRRM Repetitive peak current VRRM 150 0.1 2 15 mA 50Hz t=10ms,none voltage reapplied to 100% VRRM applied 5090 6050 A 60Hz t=8.3ms,none voltage reapplied to 100% VRRM applied 5330 6335 A 50Hz t=10ms,none voltage reapplied to 100% VRRM applied 129 183 kA²s 60Hz t=8.3ms,none voltage reapplied to 100% VRRM applied 118 167 kA²s I √t Maximum I²√t for fusing t=0.1 thru 10ms,none voltage reapllied 1830 kA²√s Rf1 Low level value of forward slo p e resistance (16.7 % x π x IF(AV) < I < π x IF AV , TJ = TJ maximum 0.59 mΩ Rf2 High level value of forward slo p e resistance (I > π x IF(AV)), TJ = TJ maximum 0.55 mΩ VFM Peak forward voltage Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 150 1.30 1.46 V Rth(j-c) Maximum thermal resistance, j unction to case DC operation 0.14 K/W Viso Isolation voltage 50Hz,R.M.S,t=1min, I iso:1mA(max) 3000 V Not lubricated threads 37 Nꞏm Lubricated threads 28 Nꞏm Tstg Stored temperature -40 200 ℃ Wt Approximate weight 165 255 g Outline UNITSYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) 156B913F01/156B913F02 VALUE 180° half sine wave 50Hz Single side cooled, Tc=120℃ 150 150 K/W Fm IFSM Surge forward current I²t Maximum I²t for fusing Maximum thermal resistance,case to heatsink ROTARY/ROTATING/ROTATION/STUD-TS307 Rth(c-s) Mounting surface, smooth, flat and greased 0.08 Maximum allowed mounting torque +0-20 %

Fig. 1 - Current Ratings Characteristics Fig.2 - Current Ratings Characteristics 110 120 130 140 150 160 170 180 0 50 100 150 200 250 300 350 30° 60° 90° 120° 180° Average F orward Current (A) Conduction Angle Maximum Allowable Case Temperature (°C) R (DC) = 0.14 K / W eries (800V to 2000V) thJC 100 110 120 130 140 150 160 170 180 0 100 200 300 400 500 600 30° 60° 90° 180° DC 120° Average F orward Current (A) Conduction P eriod Maximum Allowable Cas e T emperature (°C) R (DC) = 0.14 K/ W thJC Fig. 5 - Forward Power Loss Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 110 120 130 140 150 160 170 180 0 50 100 150 200 250 300 350 30° 60° 90° 120° 180° Average F orward Current (A) Conduction Angle Maximum Allowable Cas e Temperature (°C) R (DC) = 0.14 K / W thJC 100 110 120 130 140 150 160 170 180 0 100 200 300 400 500 30° 60° 90° 180° DC 120° Average F orward Current (A) Conduction Period Maximum Allowable Cas e T emperature (°C) R (DC) = 0.14 K/ W thJC 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R = 0.1 K/W - Delta R thSA 0. 2 K/W

0.3 K/W

1.5 K/W

3 K/W

0.7 K/W

0 50 100 150 200 250 300 350 180° 120° 90° 60° 30° RM S Li m it Conduction Angle Max imum Average F orward P ower L os s (W ) Average F orward Current (A) (800V to 2000V) T = 180°C J S Series (800V to 2000V) Series (2500V) Series (2500V) Series © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/5Rev.13T 156B913F01/156B913F02

Fig. 6 - Forward Power Loss Characteristics 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R = 0.1 K/W - Delta R thSA

0.2 K/W

180° 120° 90° 60° 30° RM S Lim it Conduction Period Maximum Average F orward P ower L os s (W) Average F orward Current (A) (800V to 2000V) T = 180°C J 20 40 60 80 100 120 140 160 180 Max imum Allowable Ambient T emperature (°C) R = 0.1 K/W - Delta R thSA 180° 120° 90° 60° 30° RM S Li mi t Conduction Angle Maximum Average F orwar d P ower L os s (W ) Average F orward Current (A) T = 180°C J Fig. 7 - Forward Power Loss Characteristics Fig. 8 - Forward Power Loss Characteristics 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R = 0.1 K/W - Delta R thSA 180° 120° 90° 60° 30° RM S Lim it Conduction Period Maximum Average F orward P ower L os s (W) Average F orward Current (A) T = 180°C J Series Series (2500V) Series (2500V) © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/5Rev.13T 156B913F01/156B913F02

Number Of E qual Amplitude Half Cycle Current P ulses (N) P eak H alf Sine Wave Forward Current (A) Init ial T = 180°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated L oad Condition And W ith R ated V Applied F ollowing S urge. RRM J (800V to 2000V) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 P uls e T rain Duration (s ) P eak H alf Sine W ave F orward Current (A) Vers us Puls e T rain Duration. Init ial T = 180 °C No Voltage R eapplied R ated V R eapplied Maximum Non R epetitive S urge Current RRM J (800V to 2000V) Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 1 10 100 Number Of E qual Amplitude Half Cycle Current P uls es (N) P eak H alf S ine Wave F orward Current (A) Initial T = 180°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated L oad Condition And W ith R ated V Applied F ollowing S urge. RRM J 1000 2000 3000 4000 5000 6000 0.01 0.1 1 P uls e T rain Duration (s ) P eak H alf S ine W ave F orward Current (A) Vers us P uls e T rain Duration. Initial T = 180 °C No Voltage R eapplied R ated V R eapplied RRM J Maximum Non R epetitive S urge Current eries (2500V) Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics 100 1000 10000 0 0.5 1 1.5 2 2.5 3 T = 25°C J Ins tantaneous F orward Voltage (V) Ins tantaneous F orward Current (A) eries (800V to 2000V) T = 180°C J 100 1000 10000 00 . 511 . 522 . 533 . 5 T = 2 5° C J Ins tantaneous F orward Voltage (V) Ins tantaneous F orward Current (A) eries (2500V) T = 180°C J Series Series Series (2500V) S S S © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/5Rev.13T 156B913F01/156B913F02

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.13T Fig. 15 - Thermal Impedance Z thJC Characteristic 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave Puls e Duration (s ) thJC T r ans ient T hermal Impedance Z (K/W) S teady S tate Value: R = 0.14 K/ W (DC Operation) thJC Series 156B913F01/156B913F02