SD1534-01 STMICROELECTRONICS | Alldatasheet

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RF & MICROWAVE TRANSISTORS .280 4LSL (M115) epoxy sealed

DESCRIPTION

The SD1534-01 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1534-01 is pack- aged in the .280" input matched stripline package resulting in improved broadband performance and a low thermal resistance. PIN CONNECTION BRANDING 1534-1 ORDER CODE SD1534-01 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 5.5 A PDISS Power Dissipation 218.7 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 0.8 °C/W SD1534-01 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA November 1992 .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .80 WATTS (typ.) IFF 1030 - 1090 MHz .75 WATTS (min.) DME 1025 - 1150 MHz .50 WATTS (typ.) TACAN 960 - 1215 MHz .8.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS .INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS .INPUT MATCHED, COMMON BASE CONFIGURATION

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f = 1025 — 1150MHz P IN = 13.0W V CE = 50 V 75 — — W G P f = 1025 — 1150MHz P IN = 13.0W V CE = 50 V 7.6 — — dB Note: Pulse Width = 10µSec, Duty Cycle = 1% This device is suitable for use under other pulse width/duty cycle conditions. Please contact the factory for specific applications assistance. STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 10mA I E = 0mA 65 — — V BV CES IC = 25mA V BE = 0V 65 — — V BV EBO IE = 10mA I C = 0mA 3.5 — — V ICES VCE = 50V I E = 0mA — — 5 mA hFE VCE = 5V I C = 100mA 10 — — — DYNAMIC SD1534-01

Ref.: Dwg. No.12-0115 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD1534-01