SD1530-08 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .250 SQ. 2LFL (M105) hermetically sealed
DESCRIPTION
The SD1530-08 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-08 is pack- aged in the .250” input matched hermetic stripline flange package resulting in improved broadband performance and a low thermal resistance. PIN CONNECTION BRANDING 1530-8 ORDER CODE SD1530-08 ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 2.6 A PDISS Power Dissipation 87.5 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 2.0 °C/W SD1530-08 1. Collector 3. Emitter 2. Base THERMAL DATA August 1993 .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .40 WATTS (typ.) IFF 1030 - 1090 MHz .35 WATTS (min.) DME 1025 - 1150 MHz .25 WATTS (typ.) TACAN 960 - 1215 MHz .9.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS .INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS .INPUT MATCHED, COMMON BASE CONFIGURATION
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1025 − 1150 MHz P IN = 5.0 W V CE = 50 V 35 — — W PG f= 1025 − 1150 MHz P IN = 5.0 W V CE = 50 V 8.5 — — dB ηcf = 1025 − 1150 MHz P IN = 5.0 W V CE = 50 V 30 — — % Note: Pulse Width = 10µSec, Duty Cycle= 1% This device is suitable for use under other pulse width/duty cycle conditions. Please contact the factory for specific applications assistance. STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 10 mA I E = 0m A 6 5 — — V BV CES IC = 25 mA V BE = 0 V 65 — — V BV EBO IE = 1m A I C = 0m A 3 . 5 — — V ICES VCE = 50 V I E = 0m A — — 5 m A hFE VCE = 5V I C = 500 mA 10 — 200 DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT SD1530-08
TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE SD1530-08
C1, C3 : 0.6 - 4.5pF, Johanson Gigatrim C2 : 470pF ATC Chip Capacitor C4 : 1000pF ATC Chip Capacitor C5 : 1000 µF, 63V, Electrolytic Capacitor L1 : 4.5 Turns #22 AWG Wire Z1 : 500mm Line Z2 : .450” Wire Line Length .600” Z3 : 50 Ω Shunt Line Z4 : .110” x .490” Z5 : .250” x .700” Z6 : .250” x .225” Z7 : Ground Z8 : .185” x .360” Z9 : .180” x .120” TEST CIRCUIT AND PC BOARD LAYOUT SD1530-08
Ref.: Dwg. No.12-0105 rev. B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron- ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. SD1530-08