152CMQ030 SMC | Alldatasheet
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Technical content
Technical Data Green Products Data Sheet N1180, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 152CMQ030 152CMQ030 SCHOTTKY RECTIFIER Applications:
- Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection Features:
- 150 °C TJ operation
- Isolated heatsink
- Multiple leads per terminal for high frequency, high current PC board mounting
- Low profile, high current package
- Center tap module
- Low forward voltage drop
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- High frequency operation
- Guard ring for enhanced ruggedness and long term reliability
- This is a Pb − Free Device
- All SMC parts are traceable to the wafer lot
- Additional testing can be offered upon request Mechanical Dimensions: In Inches/mm TO-249(9 pin) MARKING, MOLDING RESIN Marking for 152CMQ030, 1 st row SS YYWWL, 2 nd row 152CMQ030, 3 rd row 1 2 3 (Pin) Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL: 94V-0
Technical Data Green Products Data Sheet N1180, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 152CMQ030 Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 30 V Max. Average Forward* IF(AV) 50% duty cycle @TC = 85°C, rectangular wave form 150 A Max. Peak One Cycle Non- Repetitive Surge Current (peg leg) I FSM 8.3 ms, half Sine pulse 1200 A Non-Repetitive Avalanche Energy(peg leg) EAS TJ=25℃,IAS=15A,L=0.6mH 68 mJ Repetitive Avalanche Current(peg leg) IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max.VA=1.5×VR typical 15 A Electrical Characteristics: Characteristics Symbol Condition Max. Units VF1 @ 75A, Pulse, TJ = 25 °C @ 150A, Pulse, TJ = 25 °C 0.55 0.69 V Max. Forward Voltage Drop (per leg) * VF2 @ 75A, Pulse, TJ = 75 °C @ 150A, Pulse, TJ = 75 °C 0.47 0.66 V Max. Reverse Current (per leg) * IR1 @VR = rated VR TJ = 25 °C 5 mA IR2 @VR = rated VR TJ = 125 °C 280 mA Max. Junction Capacitance (per leg) CT @VR = 5V, TC = 25 °C fSIG = 1MHz 3700 pF Typical Series Inductance (per leg) LS Measured lead to lead 5 mm from package body 9.2 nH Max. Voltage Rate of Change dv/dt - 10,000 V/μs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature TJ - -55 to +150 °C Max. Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Case (per leg) RθJC DC operation 1.0 °C/W Maximum Thermal Resistance Junction to Case (per package) R θJC DC operation 0.5 °C/W Typical Thermal Resistance, case to Heat Sink Rθcs Mounting surface, smooth and greased 0.10 °C/W 40(min) Mounting Torque T M - 58(max) Kg-cm Approximate Weight wt - 56 g Case Style TO-249(9 pin)
Technical Data Green Products Data Sheet N1180, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 152CMQ030
Technical Data Green Products Data Sheet N1180, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 152CMQ030 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..