SD1528-06 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .280 4 LFL (M115) epoxy sealed .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .20 W (typ.) IFF 1030 - 1090 MHz .15 W (min.) DME 1025 - 1150 MHz .15 W (typ.) TACAN 960 - 1215 MHz .REFRACTORY GOLD METALLIZATION .EMITTER BALLASTED AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS .20:1 LOAD VSWR CAPABILITY @ SPECIFIED OPERATING CONDITIONS .INPUT MATCHED, COMMON BASE CONFIGURATION
DESCRIPTION
The SD1528-06 is a gold metallized epitaxial silicon NPN power transistor. The SD1528-06 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1528-06 is packaged in the .280” input matched stripline package, resulting in improved broadband performance and low thermal resist- ance. PIN CONNECTION BRANDING 1528-6 ORDER CODE SD1528-06 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 1.5 A PDISS Power Dissipation 87.5 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 2.0 °C/W SD1528-06 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA November 1992 1/4
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1025 — 1150MHz P IN = 1.5 W V CE = 50 V 15 — — W G P f= 1025 — 1150MHz P IN = 1.5 W V CE = 50 V 10 — — dB ηcf = 1025 — 1150MHz P IN = 1.5 W V CE = 50 V 30 — — % Note: Pulse Width = 10µsec, Duty Cycle= 1% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 10mA I E = 0mA 65 — — V BV CES IC = 25mA V BE = 0V 65 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V ICES VCE = 50V I E = 0mA — — 2 mA hFE VCE = 5V I C = .1A 10 — 200 — DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT POWER OUTPUT vs FREQUENCY SD1528-06
FREQ. Z IN (Ω )Z CL (Ω ) 960 MHz 2.5 + j 12.5 17.0 + j 15.5 1030 MHz 3.5 + j 12.5 17.0 + j 14.5 1090 MHz 3.0 + j 13.5 19.5 + j 12.5 1150 MHz 3.5 + j 14.0 18.0 + j 12.0 1215 MHz 5.0 + j 17.0 16.0 + j 12.0 SD1528-06
Ref.: Dwg. No.12-0115 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD1528-06