1517-110M ADPOW | Alldatasheet
Document overview
- Manufacturer or author: ckisor
- PDF pages: 4
Technical content
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1517-110M
110 Watts, 40 Volts, 200µs, 10%
The 1517-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 200 microseconds pulse width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically solder-sealed transistor is specifi cally designed for upper L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55AW-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25°C1 350 W Maximum Voltage and Current Collector to Base Voltage (BVCES) 70 V Emitter to Base Voltage (BVEBO) 3 V Collector Current (IC) 9 A Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature +200 °C FUNCTIONAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Output 110 120 150 W Pg Power Gain 7.3 8.6 dB ηc Collector Efficiency 40 % IRL Input Return Loss 9 dB Pd Pulse Droop F = 1480-1650 MHz Vcc = 40 Volts Pin = 20.5 W Pulse Width = 200µs Duty Factor = 10% 0.5 dB VSWR1 Load Mismatch Tolerance F=1480 MHz, Pin = 20.5 W 3:1 ELECTRICAL CHARACTERISTICS @ 25°C IEBO Emitter cutoff current V EB = 3 V 10 mA BVCES Collector to Emitter Breakdown I C = 40 mA 70 V hFE DC – Current Gain V CE = 5V, Ic = 1A 20 θjc1 Thermal Resistance 0.5 °C/W NOTES: 1. Pulse condition of 200µsec, 10%
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1517-110M Performance Curves – Typical Impedances IMPEDANCE Freq(MHz) Zs Zl 1480 4.76 – j 5.08 2.50 – j 7.67 1510 4.78 – j 4.60 2.40 – j 7.40 1560 4.84 – j 4.13 2.31 – j 7.15 1610 4.95 – j 3.69 2.22 – j 6.91 1650 5.10 – j 3.27 2.14 – j 6.68 Pout vs Pin Vcc=40V, 200us, 10%, 10 0 12 5 15 0 17 5 0 5 1 0 1 5 20 25 30 Pin (W) 14 8 0 M Hz 15 6 0 M Hz 16 6 0 M Hz Series Load Impedance Vs Frequency Vcc= 40Volts, Pout = 110W, 200 us, 10% 1.00 1.50 2.00 2.50 3.00 1460 1510 1560 1610 1660 Frequency Rcl ( Ohms) -8.00 -7.50 -7.00 -6.50 -6.00 jXcl ( Ohms) Rl JXl Series Sopurce Impedance vs Frequency Vcc = 40 Volts, Pout = 110W, 200 us, 10% 3.5 4.0 4.5 5.0 5.5 1410 1460 1510 1560 1610 1660 Frequency Rin ( Ohms) -6.0 -5.0 -4.0 -3.0 -2.0 jXin ( Ohms) Rin jXin Power Gain and Efficiency vs Frequency Vcc = 40 V, Pout = 110W, 200 us, 10% 1460 1510 1560 1610 1660 Frequency MHz Power Gain Efficiency % Pgain Efficiency
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1517-110M BROADBAND TEST CIRCUIT
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT. Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1517-110M Case Outline