151 MICROSEMI | Alldatasheet

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Technical content

Dim. Inches Millimeter = r PON Minimum Maximum Minimum Maximum Notes AA Pp Amn ~o a ~~ > 1 R at es J_f- Bo 1.237 1.243 (31.42 31.57 B | Cc 1.350 1.360 34.29 34.54 Tt kK~ D 7.428 7.671 188.67 «194.84 Ss Eo E 7,382 8100 187.50 205.74 c F 1.047 1.077 26.59 27.36 G 365 385 9.27 9.78 Y v J .660 749 16.76 19.02 2 x K 338 348 8.59 8.84 Dia. w U M625 687 15.88 17.45 N 140 150 3.56 3.81 tT; he Poo 295 = - 7.49 tH [ | ik Ro == 112500 === 28.56 Dia. a SS .295 305 7.49 1.75 J pr 0 4G F To === 2.550 9 --- 64.77

43 G A =

A = U 620 630 15.75 16.00 T an Vv 276 2867.01 7.26 Dia. TO-209AB (T093) W065 .075 1.65 1.91 Dia. : X 245 255 6.22 6.48 Notes: Y 1243 rst] --- 1. 3/4-16 UNF—3A Z 770 790 19.56 20.07 2. Full thread within 2 1/2 threads ‘AA 120 130 3.05 3.30 3. For insulated cathode lead, add suffix "IL" to catalog number : : . . Microsemi Forward & Reverse Reverse Transient . Cotaicg Number Rebel’ Biadking Blocking High dv/dt-200 V/usec. Teloacon rd Bd © 3500 Amperes surge current capability 1S106GOA 600 700 ® Low forward on-state voltage 15108GOA 800 900 . 15110GOA 1000 1100 © Primarily for line commutated converters 15112GOA 1200 1300 - a na Economical for general purpose phase control Change A” suffix to "D” for flag lead applications To specify avjat higher than 200V/usec., contact factory.

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 235 Amps Tc = 74°C Max. average on-state cur. 'T(AV) 150 Amps Tc = 74°C Mox. peak on-state voltage VIM 1.7 Volts 'TM = 500 A(peak) Max. holding current 1H 200 mA Max. peak one cycle surge current 'TsM 35004 Te = 74°C, 60Hz Max. I2t capability for fusing It 50,000A2S t= 83 ms Thermal and Mechanical Characteristics Operating junction temp range TW 65°C to 125°C Storage temperature range TSTG ~65°C to 150°C Maximum thermal resistance Reuc 0.20°C/W Junction to case Typical thermal resistance (greased) ‘CS 0.40°C/W Case to sink Mounting torque 250-300 inch pounds Weight 7.4 ounces (211.1 grams) typical . COLORADO 800 Hoyt Street Broomfield, CO. 80020 10-6-00 Rev. 1 jcrosemi 6% FAX: (303) 466-3775 www.microsemi.com

Critical rate of rise of on-state current (note 1) —_di/dt 100A /usec. Ty = 125°C Typical delay time (note 1) td 3.0 usec. . Typical circuit commuted turn-off time (note 2) tq 100 usec. Ty = 125°C Note 1: 'TM = 100A,Y D =VORM, YGT = 12V open circuit, 20 ohm-0.1 usec rise time Note 2: 'TM = 100A, di/dt = 5A/usec,Y R during turn-off internal = SOV min, reapplied dv/dt = 20V/usec., linear to rated VDRM, VCT = OV Triggering Max. gate voltage to trigger Vet 3.0V Ty = 25°C Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Max. gate current to trigger \\GT 150mA TJ = 25°C Max. peck gate power PoM 10W Average gate power PG(AV) 2.0W tp = 10 usec. Max. peak gate current ‘GM 2.0A Max. peak gate voltage (forward) Vom 10V Max. peak gate voltage (reverse) Vom 5.0V Blocking Max. leakage current "DORM 15mA Ty =125°C &V DRM Max. reverse leakage 'RRM 15mA Ty =125°C &V RRM Critical rate of rise of off-state voltage dv/at 200V/usec. Ty =125°C 10-6-00 Rev. 1

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