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  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • High Surge Capability DO-8 Package
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol 150K(R)20 A 150K(R)40A 150K(R)60A Unit Repetitive peak reverse voltage VRRM 200 400 600 V DC blocking voltage VDC 200 400 600 V Continuous forward current IF 150 150 150 A
  • Types from 200 V to 1000 V VRRM 2. Reverse polarity (R): Stud is anode. Silicon Standard Recovery Diode 150K(R)20A thru 150K(R)100A TC ≤ 110 °C 150K(R)100A 800 150K(R)80A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 150 150 1000 1000800 Conditions Continuous forward current IF 150 150 150 A I2t for fusing I2t t = 8.3ms 58000 58000 58000 A2sec Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol 150K(R)20 A 150K(R)40A 150K(R)60A Unit Diode forward voltage 1.33 1.33 1.33 Thermal characteristics Thermal resistance, junction - case RthJC 0.25 0.25 0.25 °C/W A3740 Reverse current IR VF 3740 VR = VRRM, Tj = 175 °C 35 35 32 24 mA 58000 58000 -55 to 150 -55 to 150 IF = 150 A, Tj = 25 °C C Conditions 3740 3740 -55 to 150 150 150 -55 to 150 150K(R)100A150K(R)80A 0.25 0.25 1.33 1.33 V Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM 3740TC = 25 °C, tp = 8.3 ms www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1

150K(R)20A thru 150K(R)100A www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2

Package dimensions and terminal configuration Product is marked with part number and terminal configuration. 150K(R)20A thru 150K(R)100A DO-8 (DO-205AA) G D H I F B Inches Millimeters Min Max Min Max A 3/8-24 UNF C 1.050 1.060 26.67 26.92 D 4.300 4.700 109.22 119.38 I 0.276 0.286 7.010 7.260 A E C www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3