150EBU04 IRF | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

Ultrafast Soft Recovery Diode VR Cathode to Anode Voltage 400 V IF(AV) Continuous Forward Current, TC = 104°C 150 A IFSM Single Pulse Forward Current, TC = 25°C 1500 IFRM ! Maximum Repetitive Forward Current 300 TJ, TSTG Operating Junction and Storage Temperatures - 55 to 175 °C Parameters Max Units

  • Ultrafast Recovery
  • 175°C Operating Junction Temperature Benefits
  • Reduced RFI and EMI
  • Higher Frequency Operation
  • Reduced Snubbing
  • Reduced Parts Count These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. !"Square Wave, 20kHz

Bulletin PD-20744 rev. A 01/01 VBR, Vr Breakdown Voltage, 400 - - V I R = 200µA Blocking Voltage VF Forward Voltage - 1.07 1.3 V I F = 150A - 0.9 1.1 V I F = 150A, TJ = 175°C - 0.96 1.17 V I F = 150A, TJ = 125°C IR Reverse Leakage Current - - 50 µA V R = VR Rated --4 m A T J = 150°C, VR = VR Rated C T Junction Capacitance - 100 - pF V R = 400V L S Series Inductance - 3.5 - nH Measured lead to lead 5mm from package body Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions trr Reverse Recovery Time -- 60 ns I F = 1.0A, diF/dt = 200A/µs, VR = 30V -9 3- T J = 25°C - 172 - T J = 125°C IRRM Peak Recovery Current - 11 - A T J = 25°C -2 0- T J = 125°C Qrr Reverse Recovery Charge - 490 - nC T J = 25°C - 1740 - T J = 125°C Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) IF = 150A VR = 200V diF /dt = 200A/µs Parameters Min Typ Max Units Test Conditions Parameters Min Typ Max Units RthJC Thermal Resistance, Junction to Case 0.35 K/W RthCS # Thermal Resistance, Case to Heatsink 0.2 Wt Weight 5.02 g 0.18 (oz) T Mounting Torque 1.2 2.4 N * m 10 20 lbf.in Thermal - Mechanical Characteristics #"Mounting Surface, Flat, Smooth and Greased

Bulletin PD-20744 rev. A 01/01 150EBU04 Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Forward Voltage Drop - VFM (V) Instantaneous Forward Current - I F (A) Reverse Voltage - VR (V) Reverse Voltage - VR (V) Junction Capacitance - C T (pF) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics t1, Rectangular Pulse Duration (Seconds) Thermal Impedance Z thJC (°C/W) Reverse Current - I R (µA) 100 1000 10000 10 100 1000 T = 25˚CJ .01 0.1 Single Pulse (Thermal Resistance) D = 0.50 D = 0.20 D = 0.10 Notes: 1. Duty factor D = t1/ t 2 2. Peak Tj = Pdm x ZthJC + Tc D = 0.05 D = 0.02 D = 0.01 PDM 0.001 0.01 0.1 100 1000 0 100 200 300 400 25˚C T = 175˚CJ 125˚C 100 1000 T = 175˚C T = 125˚C T = 25˚C J J J

Bulletin PD-20744 rev. A 01/01 Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR Average Power Loss ( Watts ) trr ( ns ) Qrr ( nC ) Average Forward Current - IF(AV) (A) Allowable Case Temperature (°C) Average Forward Current - IF(AV) (A) di F /dt (A/µs )di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dtFig. 7 - Typical Reverse Recovery time vs. di F /dt 0 50 100 150 200 250 DC Square wave (D = 0.50) Rated Vr applied see note (3) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 100 1000 IF = 150A IF = 75A Vr = 200V Tj = 125˚C Tj = 25˚C 100 150 200 250 300 0 50 100 150 200 250 DC RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 100 150 200 250 100 1000 IF = 150A IF = 75A Vr = 200V Tj = 125˚C Tj = 25˚C

Bulletin PD-20744 rev. A 01/01 150EBU04 Fig. 10 - Reverse Recovery Waveform and Definitions IRFP250 D.U.T. L = 70µH V = 200VR 0.01 Ω G D S dif/dt ADJUST ta tb trr Qrr IF IRRM I RRM0.5 di(rec)M/dt

0.75 IRRM

Fig. 9- Reverse Recovery Parameter Test Circuit Reverse Recovery Circuit di F /dt di F /dt 4. Qrr - Area under curve defined by t rr and IRRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Q rr = t rr x I RRM

Bulletin PD-20744 rev. A 01/01 Dimensions in millimeters and (inches) Outline Table Ordering Information Table Device Code 1 52 43 1 - Current Rating (150 = 150A) 2 - Single Diode 3 - Pow IRtab (Ultrafast/ Hyperfast only) 4 - Ultrafast Recovery 5 - Voltage Rating (04 = 400V)

150 E B U 04

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/01