150EBU02 IRF | Alldatasheet

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Ultrafast Soft Recovery Diode VR Cathode to Anode Voltage 200 V IF(AV) Continuous Forward Current, TC = 116°C 150 A IFSM Single Pulse Forward Current, TC = 25°C 1600 IFRM ! Maximum Repetitive Forward Current 380 TJ, TSTG Operating Junction and Storage Temperatures - 55 to 175 °C Parameters Max Units

  • Ultrafast Recovery
  • 175°C Operating Junction Temperature Benefits
  • Reduced RFI and EMI
  • Higher Frequency Operation
  • Reduced Snubbing
  • Reduced Parts Count These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. !"Square Wave, 20kHz

Final PD-20741 rev. A 01/01 VBR, Vr Breakdown Voltage, 200 - - V I R = 100µA Blocking Voltage VF Forward Voltage - 0.99 1.13 V I F = 150A - 0.79 0.90 V I F = 150A, TJ = 175°C IR Reverse Leakage Current - - 50 µA V R = VR Rated --2 m A T J = 150°C, VR = VR Rated CT Junction Capacitance - 180 - pF V R = 200V LS Series Inductance - 3.5 - nH Measured lead to lead 5mm from package body Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions trr Reverse Recovery Time -- 45 ns I F = 1.0A, diF/dt = 200A/µs, VR = 30V -3 4- T J = 25°C -5 8- T J = 125°C IRRM Peak Recovery Current - 4.5 - A T J = 25°C Qrr Reverse Recovery Charge - 87 - nC T J = 25°C - 300 - T J = 125°C Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) IF = 150A VR = 160V diF /dt = 200A/µs Parameters Min Typ Max Units Test Conditions Parameters Min Typ Max Units RthJC Thermal Resistance, Junction to Case 0.35 K/W RthCS # Thermal Resistance, Case to Heatsink 0.2 Wt Weight 5.02 g 0.18 (oz) T Mounting Torque 1.2 2.4 N * m 10 20 lbf.in Thermal - Mechanical Characteristics #"Mounting Surface, Flat, Smooth and Greased

Bulletin PD-20741 rev. A 01/01 150EBU02 Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Forward Voltage Drop - VFM (V) Instantaneous Forward Current - I F (A) Reverse Voltage - VR (V) Reverse Voltage - VR (V) Junction Capacitance - C T ( p F ) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics t1, Rectangular Pulse Duration (Seconds) Thermal Impedance Z thJC (°C/W) Reverse Current - I R (µA) 100 1000 T = 175˚C T = 125˚C T = 25˚C J J J 100 1000 10000 1 10 100 1000 T = 25˚CJ 0.01 0.1 Single Pulse (Thermal Resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.001 0.01 0.1 100 1000 0 50 100 150 200 25˚C T = 175˚CJ 125˚C

Final PD-20741 rev. A 01/01 Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR Average Power Loss ( Watts ) trr ( ns ) Qrr ( nC ) Average Forward Current - IF(AV) (A) Allowable Case Temperature (°C) Average Forward Current - IF(AV) (A) di F /dt (A/µs )di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dtFig. 7 - Typical Reverse Recovery time vs. di F /dt 100 120 140 160 180 0 50 100 150 200 250 DC Square wave (D = 0.50) 80% Rated Vr applied see note (3) 100 150 200 250 0 50 100 150 200 250 DC RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 100 1000 IF = 150A IF = 75A Vr = 160V Tj = 125˚C Tj = 25˚C 100 200 300 400 500 600 700 800 900 100 1000 Vr = 160V Tj = 125˚C Tj = 25˚C IF = 150A IF = 75A

Bulletin PD-20741 rev. A 01/01 150EBU02 Fig. 10 - Reverse Recovery Waveform and Definitions IRFP250 D.U.T. L = 70µH V = 200VR 0.01 Ω G D S dif/dt ADJUST ta tb trr Qrr IF IRRM I RRM0.5 di(rec)M/dt

0.75 IRRM

Fig. 9- Reverse Recovery Parameter Test Circuit Reverse Recovery Circuit di F /dt di F /dt 4. Qrr - Area under curve defined by t rr and IRRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Q rr = t rr x I RRM

Final PD-20741 rev. A 01/01 Dimensions in millimeters and (inches) Outline Table Ordering Information Table Device Code 1 52 43 1 - Current Rating (150 = 150A) 2 - Single Diode 3 - Pow IRtab (Ultrafast/Hyperfast only) 4 - Ultrafast Recovery 5 - Voltage Rating (02 = 200V)

150 E B U 02

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/01