150C MICROSEMI | Alldatasheet

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Technical content

Dim. Inches Millimeter PON Minimum Maximum Minimum Maximum Notes a R at es J_f- Bo 1.237 1.243 (31.42 31.57 B | Cc 1.350 1.360 34.29 34.54 Tt kK~ D 7.428 7.671 188.67 «194.84 Ss Eo E 7,382 8100 187.50 205.74 c F 1.047 1.077 26.59 27.36 G 365 385 9.27 9.78 Y v J .660 749 16.76 19.02 2 x K 338 348 8.59 8.84 Dia. w U M625 687 15.88 17.45 N 140 150 3.56 3.81 tT; he Poo 295 = - 7.49 tH [ | ik Ro == 112500 === 28.56 Dia. a SS .295 305 7.49 1.75 wa G 1 = A = U 620 630 15.75 16.00 T Vv .276 286 7.01 7.26 Dia. TO-209AB (T093) W065 .075 1.65 1.91 Dia. 1. 3/4-16 UNF—3A Z 770 790 19.56 20.07 2. Full thread within 2 1/2 threads ‘AA 120 130 3.05 3.30 3. For insulated cathode lead, add suffix "IL" to catalog number : : . . Microsemi Forward & Reverse Reverge Transient | | * High dv/dt-200 V/usec. Catalog Number petitive Blocking locking 7 @ 3000 Amperes surge current capability 150C60B 600 700 150C80B 800 900 ®Low forward on-state voltage 150C100B 1000 1100 © Dri ( F 15001208 1200 1300 Primarily for line commutated converters Add suffix "F" for flag lead e Economical for general purpose phase control To specify dv/dt higher than 200V/usec., contact factory. PP

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 235 Amps To = 73°¢ Max. average on-state cur. 'T(AV) 150 Amps TC = 73°C Mox. peak on-state voltage VIM 1.6 Volts 'TM = 500 A(peak) Max. holding current IH 200 mA Max. peak one cycle surge current 'TsM 3000 Te = 73°C, 60Hz Max. I2t capability for fusing '2t 37,000A2S t = 83 ms Thermal and Mechanical Characteristics Operating junction temp range Ty 65°C to 125°C Storage temperature range TSTG ~65°C to 150°C Maximum thermal resistance Rave 0.20°C/W Junction to case Typical thermal resistance (greased) ‘CS 0.40°C/W Case to sink Mounting torque 250-300 inch pounds Weight 7.4 ounces (211.1 grams) typical . COLORADO 800 Hoyt Street Broomfield, CO. 80020 10-6-00 Rev. 1 jcrosemi 6% FAX: (303) 466-3775 www.microsemi.com

Critical rate of rise of on-state current (note 1) —_di/dt 100A /usec. Ty = 125°C Typical delay time (note 1) td 3.0 usec. . Typical circuit commuted turn-off time (note 2) tq 100 usec. Ty = 125°C Note 1: 'TM = 100A,Y D =VORM, YGT = 12V open circuit, 20 ohm-0.1 usec rise time Note 2: 'TM = 100A, di/dt = 5A/usec,Y R during turn-off internal = SOV min, reapplied dv/dt = 20V/usec., linear to rated VDRM, VCT = OV Triggering Max. gate voltage to trigger Vet 3.0V Ty = 25°C Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Max. gate current to trigger 'GT 150mA Ty = 25°C Max. peck gate power Pom 10W Average gate power Po(av) 2.0W tp = 10 usec. Max. peak gate current ‘GM 2.0A Max. peak gate voltage (forward) Vom 10V Max. peak gate voltage (reverse) Vom 5.0V Blocking Max. leakage current "DORM 20mA Ty =125°C &V DRM Max. reverse leakage 'RRM 20mA Ty =125°C &V RRM Critical rate of rise of off-state voltage dv/at 200V/usec. Ty =125°C 10-6-00 Rev. 1

Typical Forward On—State Characteristics Maximum Power Dissipation 10000. 2 550 SSeS MOO a 300 a i 1 A GO 5 250 eo EEE CC FCCC Cee § 30° wo tt ETT ETT ET TT gi VALE ra LL Le co Se ArT tooo +| | +} || 4 2 50 wZAA SHEE eet Se le rc a 72 0 20 40 60 80 100 120 140 160 180 200

400 Peed LH ie fad Average On-State Current - Amperes

fot YLT TTT TE) ese 8 500 | Transient Thermal Impedance "tat Vee TELL) Ono j 2 2 tool teste /|_ fase ¥ 30 100. er g ae a eee & Saar 3.25 oA EE EEE vo CLIT UIT UIT UIT ee 00 al Bol ee I rT Sette EEC Po TUTTI TTT TTT TT | eto 4 Fy SE. 7 2 2 CTL 2 0 52 0 Ly 6 8 10 12 14 16 18 20 001 1 on 1.0 10 100 Instantaneous On-State Voltage — Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating Maximum Nonrepetitive Surge Current veel ITI) PSCC ooo § 120 SSS = 3000 i bw NSA: wo LL TT | tL & ~ oc NSN © con Se g 5 eo tT ALANNA Sef PPT Na eee 2 4 & 1000 sot tt THATS ¢ yt 1 Tit tT TT 5 70 500 E % Sco LL dl dott Lio! Jd 88) L_ T T TT T T TT 0 30 60 90 120. ‘150 1 10 700 Average On-Stote Current - Amperes Number of Cycles 10-6-00 Rev. 1