14N65-TC

14N65-TC UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 14N65-TC Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2019 Unisonic Technologies Co., Ltd QW-R205-452.C 14A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N65-TC are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency s witch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.  FEATURES * RDS(ON) ≤ 0.7 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 1.Gate 3.Source 2.Drain TO-263 TO-220F1 TO-220F3  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 14N65L-TF1-T 14N65G-TF1-T TO-220F1 G D S Tube 14N65L-TF3T-T 14N65G-TF3T-T TO-220F3 G D S Tube 14N65L-TQ2-T 14N65G-TQ2-T TO-263 G D S Tube 14N65L-TQ2-R 14N65G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube, R: Tape Reel (2) TF1: TO-220F1, TF3: TO-220F3, TQ2: TO-263 (3) G: Halogen Free and Lead Free, L: Lead Free 14N65G-TF1-T (1)Packing Type (2)Package Type (3)Green Package

UNISONIC TECHNOLOGIES CO., LTD 2 of 9 www.unisonic.com.tw QW-R205-452.C  MARKING UTC 14N65 L: Lead Free G: Halogen Free Date CodeLot Code

UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R205-452.C  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 14 A Pulsed (Note 2) IDM 28 A Avalanche Energy Single Pulsed (Note 3) EAS 530 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.2 V/ns Power Dissipation TO-220F/TO-220F1 TO-220F3 PD 50 W TO-263 235 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 60mH, IAS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 14A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220F/TO-220F1 TO-220F3 θJC 2.5 °C/W TO-263 0.53 °C/W

UNISONIC TECHNOLOGIES CO., LTD 4 of 9 www.unisonic.com.tw QW-R205-452.C  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 10 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.0A 0.52 0.7 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz 1960 pF Output Capacitance COSS 200 pF Reverse Transfer Capacitance CRSS 11 pF SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=300V, VGS=10V, ID=10A IG=1mA (Note 1, 2) 41 nC Gate-Source Charge QGS 8 nC Gate-Drain Charge QGD 9.4 nC Turn-On Delay Time tD(ON) VDD=300V, VGS=10V, ID =10A, RG =25Ω (Note 1, 2) 26 ns Turn-On Rise Time tR 20 ns Turn-Off Delay Time tD(OFF) 130 ns Turn-Off Fall Time tF 32 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 14 A Maximum Body-Diode Pulsed Current ISM 28 A Drain-Source Diode Forward Voltage VSD VGS=0V, IS=14A 1.4 V Reverse Recovery Time trr VGS=0V, IS=14A, di/dt=100A/μs 364 ns Reverse Recovery Charge Qrr 4.5 μC Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 5 of 9 www.unisonic.com.tw QW-R205-452.C  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test ISD Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 9 www.unisonic.com.tw QW-R205-452.C  TEST CIRCUITS AND WAVEFORMS VGS DUT RG VDS RD VDS VGS 90% 10% td(ON) tR tFtd(OFF) tON tOFF itching Test Circuit Switching Waveforms DUT VDS Same Type as D.U.T. VGS Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform D.U.T. RD VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 7 of 9 www.unisonic.com.tw QW-R205-452.C  TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain-Source Voltage, VDS (V) Drain-Source On-Resistance vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Gate Charge Characteristics Total Gate Charge, QG (nC) Drain-Source On-Resistance vs. Junction Temperature Junction Temperature, TJ (°C) Drain-Source On-Resistance, RDS(ON) (Ω) Gate-Source Voltage, VGS (V)Drain-Source On-Resistance Normalized 4.5V ID=7A 14A Note: 1.TA=25°C 2.Pulse test Breakdown Voltage vs. Junction Temperature Drain-Source Breakdown Voltage Normalized Junction Temperature, TJ (°C) -50 0 50 150100 Drain Current vs. Drain-Source Voltage VGS=6~10V Note: 1.TA=25°C 2.Pulse test VDS=300V VGS=10V ID=10A Pulsed VGS=10V ID=7A Pulsed ID=0.25mA Pulsed 0 10 20 4030 -50 0 50 150100 0 4 8 12 16 20 0.8 1.2 1.1 5 15 3525 0.9 1.6 0.2 1.4 0.4 1.2 0.6 0 2 4 6 8 10 0.8 Drain-Source Voltage, VDS (V) Capacitance, C (pF) Capacitance Characteristics 1000 100 CISS COSS CRSS 0 10 20 30 40 50 5000

UNISONIC TECHNOLOGIES CO., LTD 8 of 9 www.unisonic.com.tw QW-R205-452.C  TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature Junction Temperature, TJ (°C) Source Current vs. Source-Drain Voltage Source-Drain Voltage, VSD (V) Drain Current vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Drain Current, ID (A) Gate Threshold Voltage Normalized Source Current, IS (A) Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) (Ω) -50 0 50 150100 25°C TA=150°C Drain-Source On-Resistance vs. Drain Current TA=25°C VGS=10V Pulsed TA=25°C Pulsed Drain Current vs. Junction Temperature Junction Temperature, TJ (°C) Drain Current, ID (A) 0 25 50 75 100 125 150 0 2 4 6 108 ID=0.25mA Pulsed 0.8 1.6 -40°C Power Dissipation vs. Junction Temperature Junction Temperature, TJ (°C) Power Dissipation, PD (W) 0 25 50 75 100 125 150 1.4 1.2 0.8 0.6 0.4 100 0.4 1.2 TO-220F1 TO-220F1 0 4 8 12 2016 0.1

UNISONIC TECHNOLOGIES CO., LTD 9 of 9 www.unisonic.com.tw QW-R205-452.C  TYPICAL CHARACTERISTICS (Cont.) Drain-Source Voltage, VDS (V) Drain Current, ID (A) 1 100010 100 Safe Operating Area DC MAX 1ms TO-220F1 10ms Operation in this area is limited by RDS(ON) TJ=150°C TC=25°C Single Pulse 100 0.01 0.1 100us 100ms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury . Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner . UTC reserves the right to make changes to information published in this document , including without limitation specifications and product descriptions , at any time and without notice . This document supersedes and replaces all information supplied prior to the publication hereof.