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UNISONIC TECHNOLOGIES CO., LTD 14N60-TC Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2018 Unisonic Technologies Co., Ltd QW-R205-542.A 14A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N60-TC are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. FEATURES * RDS(ON) ≤ 0.6Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 14N60L-TA3-T 14N60G-TA3-T TO-220 G D S Tube 14N60L-TF3-T 14N60G-TF3-T TO-220F G D S Tube 14N60L-TF1-T 14N60G-TF1-T TO-220F1 G D S Tube 14N60L-TQ2-T 14N60G-TQ2-T TO-263 G D S Tube 14N60L-TQ2-R 14N60G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source
UNISONIC TECHNOLOGIES CO., LTD 2 of 9 www.unisonic.com.tw QW-R205-542.A MARKING
UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R205-542.A ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage V GSS ±30 V Continuous I D 14 A Drain Current Pulsed (Note 2) I DM 28 A Avalanche Energy Single Pulsed (Note 3) E AS 266.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.3 V/ns TO-220/TO-263 160 W Power Dissipation TO-220F/TO-220F1 PD 37 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 7.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 14A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W TO-220/TO-263 0.78 °C/W Junction to Case TO-220F/TO-220F1 θJC 3.3 °C/W
UNISONIC TECHNOLOGIES CO., LTD 4 of 9 www.unisonic.com.tw QW-R205-542.A ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 600 V Drain-Source Leakage Current I DSS V DS=600V, VGS=0V 10 µA Gate-Source Leakage Current I GSS V GS=±30V, VDS=0V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=7.0A 0.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 1980 pF Output Capacitance C OSS 180 pF Reverse Transfer Capacitance C RSS VDS=25V, VGS=0V, f=1MHz 10 pF SWITCHING CHARACTERISTICS Total Gate Charge Q G 39 nC Gate-Source Charge Q GS 10 nC Gate-Drain Charge Q GD VDS=100V, VGS=10V, ID=14A IG=1mA (Note 1, 2) 5 nC Turn-On Delay Time t D(ON) 26 ns Turn-On Rise Time t R 19 ns Turn-Off Delay Time t D(OFF) 120 ns Turn-Off Fall Time t F VDD=100V, VGS=10V, ID =14A, RG =25Ω (Note 1, 2) 35 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 14 A Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A Drain-Source Diode Forward Voltage V SD V GS=0V, IS=14A 1.4 V Reverse Recovery Time t rr 360 ns Reverse Recovery Charge Q rr VGS=0V, IS=14A, di/dt=100A/μs 4.4 μC Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD 5 of 9 www.unisonic.com.tw QW-R205-542.A TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD 6 of 9 www.unisonic.com.tw QW-R205-542.A TEST CIRCUITS AND WAVEFORMS itching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD 7 of 9 www.unisonic.com.tw QW-R205-542.A TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD 8 of 9 www.unisonic.com.tw QW-R205-542.A TYPICAL CHARACTERISTICS (Cont.)
UNISONIC TECHNOLOGIES CO., LTD 9 of 9 www.unisonic.com.tw QW-R205-542.A TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.