14N60-ML

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

UNISONIC TECHNOLOGIES CO., LTD 14N60-ML Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2020 Unisonic Technologies Co., Ltd QW-R205-632.B 14A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N60-ML is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics . This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 1.Gate 3.Source 2.Drain TO-220F TO-220F1 TO-220F2  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 14N60L-TF1-T 14N60G-TF1-T TO-220F1 G D S Tube 14N60L-TF2-T 14N60G-TF2-T TO-220F2 G D S Tube 14N60L-TF3-T 14N60G-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F (3) G: Halogen Free and Lead Free, L: Lead Free 14N60G-TF1-T (1)Packing Type (2)Package Type (3)Green Package  MARKING UTC

14 N60

L: Lead Free G: Halogen Free Date CodeLot Code

UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R205-632.B  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 14 A Pulsed Drain Current (Note 2) IDM 28 A Avalanche Energy Single Pulsed (Note 3) EAS 614 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3 V/ns Power Dissipation PD 38 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum rat ings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 30mH, IAS = 6.4A, VDD = 100V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 14A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 3.28 °C/W  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 10 μA Gate- Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.0A 0.48 0.55 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz 1850 pF Output Capacitance COSS 184 pF Reverse Transfer Capacitance CRSS 12 pF SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=480V, VGS=10V, ID=14A IG=1mA (Note 1, 2) 41 nC Gate-Source Charge QGS 9 nC Gate-Drain Charge QGD 10 nC Turn-On Delay Time (Note 1) tD(ON) VDS=100V, VGS=10V, ID=14A, RG=25Ω (Note 1, 2) 24 ns Turn-On Rise Time tR 21 ns Turn-Off Delay Time tD(OFF) 132 ns Turn-Off Fall Time tF 34 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Body-Diode Continuous Current IS 14 A Maximum Body-Diode Pulsed Current ISM 28 A Drain-Source Diode Forward Voltage (Note 1) VSD IS=14A , VGS=0V 1.4 V Reverse Recovery Time (Note 1) trr IS=14A , VGS=0V di/dt=100A/μs 410 ns Reverse Recovery Charge Qrr 12.5 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R205-632.B  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test ISD Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R205-632.B  TEST CIRCUITS AND WAVEFORMS VGS D.U.T. RG VDS RL VDD Pulse Width≤ 1μs Duty Factor≤0.1% VDS 90% 10%VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms DUT VDS Same Type as D.U.T. VGS Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform D.U.T. RD VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R205-632.B  TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain-Source Voltage, VDS (V) Drain-Source On-Resistance vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Gate Charge Characteristics Total Gate Charge, QG (nC) Drain-Source On-Resistance vs. Junction Temperature Junction Temperature, TJ (°C) Drain-Source On-Resistance, RDS(ON) (Ω) Gate-Source Voltage, VGS (V)Drain-Source On-Resistance Normalized 14A Breakdown Voltage vs. Junction Temperature Drain-Source Breakdown Voltage Normalized Junction Temperature, TJ (°C) Drain Current vs. Drain-Source Voltage VGS=7~10V Note: 1.TA=25°C 2.Pulse test VDS=480V VGS=10V ID=14A Pulsed VGS=10V ID=7A Pulsed ID=0.25mA Pulsed Drain-Source Voltage, VDS (V) Capacitance, C (pF) Capacitance Characteristics CISS COSS CRSS Note: 1.TA=25°C 2.Pulse test6V 1000 100 25 50 75 100 125 150 25 50 75 100 125 150 1.4 0.8 1.2 2 4 6 108 ID=7A 0 10 20 30 45355 15 25 40 50 0 5 10 2015 0.5 1.5 2.5 0 10 20 30 45355 15 25 40

UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw QW-R205-632.B  TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature Junction Temperature, TJ (°C) Source Current vs. Source-Drain Voltage Source-Drain Voltage, VSD (V) Drain Current vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Drain Current, ID (A) Gate Threshold Voltage Normalized Source Current, IS (A) Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) (Ω) 25°C TA=150°C Drain-Source On-Resistance vs. Drain Current TA=25°C VGS=10V Pulsed TA=25°C Pulsed Drain Current vs. Junction Temperature Junction Temperature, TJ (°C) Drain Current, ID (A) ID=0.25mA Pulsed Power Dissipation vs. Junction Temperature Junction Temperature, TJ (°C) Power Dissipation, PD (W) 0 25 50 75 100 125 150 0.1 25 50 75 100 125 25 50 75 100 125 150 TO-220F1 150 0.6 0.7 0.8 1.1 0.9 2 3 4 5 6 7 8 0 4 8 12 16 20 0.2 0.4 0.8 0.6

UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R205-632.B  TYPICAL CHARACTERISTICS (Cont.) Drain-Source Voltage, VDS (V) Drain Current, ID (A) 1 100010 100 Safe Operating Area DC MAX TO-220F1 Operation in this area is limited by RDS(ON) TJ=150°C TC=25°C Single Pulse 100us 10ms 1ms 100 0.01 0.1 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein . UTC products are not designed for use in life support appliances , devices or systems where malfunction of these products can be reasonably expected to result in personal injury . Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner . UTC reserves the right to make changes to information published in this document , including without limitation specifications and product descriptions , at any time and without notice . This document supersedes and replaces all information supplied prior to the publication hereof.