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UNISONIC TECHNOLOGIES CO., LTD 14N50 Preliminary Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-720.c 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 14N50 is ideally suitable for high efficiency switch mode power supply, power factor correction and electronic lamp ballast based on half bridge topology. FEATURES * RDS(ON) < 0.42Ω @VGS = 10V * Ultra low gate charge (typical 43nC ) * Low reverse transfer Capacitance ( C RSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL TO-263 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 14N50L-TQ2-T 14N50G-TQ2-T TO-263 G D S Tube 14N50L-TQ2-R 1 4N50G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source
14N50 P r e l i m i n a r y Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw QW-R502-720.c MARKING
14N50 P r e l i m i n a r y Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R502-720.c ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 500 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current I D 14 A Pulsed Drain Current (Note 2) I DM 48 A Avalanche Current (Note 2) I AR 14 A Single Pulsed Avalanche Energy (Note 3) E AS 400 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) P D 150 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 9.3mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C 4. ISD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 0.83 °C/W
14N50 P r e l i m i n a r y Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R502-720.c ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0V, ID = 1mA 500 V Drain-Source Leakage Current I DSS V DS = 500V, VGS = 0V 10 μA VGS = 20V, VDS = 0V 100 nAGate-Source Leakage Current I GSS VGS = -20V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C 0.5 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 100μA 3 3.75 4.5 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID = 7A 0.34 0.42 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 2000 pF Output Capacitance C OSS 238 pF Reverse Transfer Capacitance C RSS VDS=25V, VGS=0V, f=1.0MHz 55 pF SWITCHING CHARACTERISTICS Total Gate Charge Q G 69 92 nC Gate-Source Charge Q GS 12 nC Gate-Drain Charge Q GD VDS=400V, ID=12A, VGS=10 V (Note 1,2) 31 nC Turn-On Delay Time t D(ON) 24 nS Turn-On Rise Time t R 70 nS Turn-Off Delay Time t D(OFF) 54 nS Turn-Off Fall Time t F VDD =250V, ID =14A, RG =25Ω (Note 1,2) 50 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0V, IS = 14A 1.6 V Maximum Continuous Drain-Source Diode Forward Current IS 14 A Maximum Pulsed Drain-Source Diode Forward Current ISM 56 A Reverse Recovery Time t rr 470 nS Reverse Recovery Charge Q RR VGS = 0V, IS = 14A, dIF / dt =100A/μs (Note 1) 3.1 μC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature.
14N50 P r e l i m i n a r y Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R502-720.c TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms
14N50 P r e l i m i n a r y Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw QW-R502-720.c TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
14N50 P r e l i m i n a r y Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R502-720.c UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.