HGTP14N36G3VL FAIRCHILD | Alldatasheet

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Technical content

Features

  • Logic Level Gate Drive  Internal Voltage Clamp  ESD Gate Protection J = 175oC  Ignition Energy Capable

Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in auto- motive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which pro- vides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. The development type number for this device is TA49021. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTP14N36G3VL TO-220AB 14N36GVL HGT1S14N36G3VL TO-262AA 14N36GVL HGT1S14N36G3VLS TO-263AB 14N36GVL NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S14N36G3VLS9A. December 2001 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS UNITS NOTE: May be exceeded if IGEM is limited to 10mA.

©2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Electrical SpecificationsTC = +25oC, Unless Otherwise Specified PARAMETERS SYMBOL TEST CONDITIONS LIMITS UNITSMIN TYP MAX Collector-Emitter Breakdown Voltage BV CER IC = 10mA, VGE = 0V R GE = 1kΩ TC = +175oC 320 355 400 V TC = +25oC 330 360 390 V TC = -40oC 320 350 385 V Gate-Emitter Plateau Voltage V GEP IC = 7A, VCE = 12V TC = +25oC- 2 . 7 - V Gate Charge Q G(ON) IC = 7A, VCE = 12V TC = +25oC- 2 4 - n C Collector-Emitter Clamp Breakdown Voltage BV CE(CL) IC = 7A R G = 1000Ω TC = +175oC 350 380 410 V Emitter-Collector Breakdown Voltage BV ECS IC = 10mA T C = +25oC2 4 2 8 - V Collector-Emitter Leakage Current I CER VCE = 250V R GE = 1kΩ TC = +25oC- - 2 5 µA TC = +175oC - - 250 µA Collector-Emitter Saturation Voltage VCE(SAT) IC = 7A VGE = 4.5V TC = +25oC - 1.25 1.45 V TC = +175oC - 1.15 1.6 V IC = 14A VGE = 5V TC = +25oC- 1 . 6 2 . 2 V TC = +175oC- 1 . 7 2 . 9 V Gate-Emitter Threshold Voltage V GE(TH) IC = 1mA VCE = VGE TC = +25oC 1.3 1.8 2.2 V Gate Series Resistance R 1 TC = +25oC- 7 5 - Ω Gate-Emitter Resistance R 2 TC = +25oC 1 02 03 0k Ω Gate-Emitter Leakage Current I GES VGE = ±10V ±330 ±500 ±1000 µA Gate-Emitter Breakdown Voltage BV GES IGES = ±2mA ±12 ±14 - V Current Turn-Off Time-Inductive Load tD(OFF)I + tF(OFF)I IC = 7A, RL = 28Ω R G = 25Ω , L = 550µH, VCL = 300V, VGE = 5V, TC = +175oC -7- µs Inductive Use Test I SCIS L = 2.3mH, VG = 5V, TC = +175oC1 2 -- A TC = +25oC1 7 - - A Thermal Resistance R θJC -- 1 . 5 oC/W

FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION FIGURE 8. NORMALIZED T HRESHOLD VOLTAGE AS A FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF FIGURE 10. TURN-OFF TIME AS A FUNCTION OF

1.2 ICE = 1ma

©2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Handling Precautions for IGBT’s Insulated Gate Bipolar Transistors are susceptible to gate- insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT’s are currently being extensively used in pro- duction by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no dam- age problems due to electrostatic discharge. IGBT’s can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as †“ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating -The gate-voltage rating of V GEM may be exceeded if IGEM is limited to 10mA. † Trademark Emerson and Cumming, Inc FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ Rev. H4 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET STAR*POWER is used under license VCX™