146T

TIP147TTU FAIRCHILD | Alldatasheet

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TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP145T/146T/147T Rev. C 1 August 2008 TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors

• High DC Current Gain : h FE = 1000@ VCE = - 4V, IC = - 5A (Min.)
• Industrial Use
• Complement to TIP140T/141T/142T Absolute Maximum Ratings * TC=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Parameter Value Units BVCBO Collector-Base Voltage : TIP145T : TIP146T : TIP147T - 60 - 80 - 100 V V V BVCEO Collector-Emitter Voltage : TIP145T : TIP146T : TIP147T - 60 - 80 - 100 V V V BVEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 10 A ICP Collector Current (Pulse) - 15 A IB Base Current (DC) - 0.5 A PC Collector Dissipation (TC=25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Junction Temperature Range - 65 ~ 150 °C TO-220 1.Base 2.Collector 3.Emitter Equivalent Circuit B E C R1 R2 R1 8k Ω≅ R2 0.12k Ω≅

TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP145T/146T/147T Rev. C 2 Electrical Characteristics * TC=25°C unless otherwise noted * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Symbol Parameter Conditions Min. Typ. Max Units VCEO(sus) Collector-Emitter Sustaining Voltage : TIP145T : TIP146T : TIP147T IC = - 30mA, IB = 0 - 60 - 80 - 100 V V V ICEO Collector Cut-off Current : TIP145T : TIP146T : TIP147T VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 - 2 - 2 - 2 mA mA mA ICBO Collector Cut-off Current : TIP145T : TIP146T : TIP147T VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 - 1 - 1 - 1 mA mA mA IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 2 mA hFE DC Current Gain VCE = - 4V, IC = - 5A VCE = - 4V, IC = - 10A 1000 500 VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA - 2 - 3 V V VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A - 3 V td Delay Time VCC = - 30V, IC = - 5A IB1 = -20mA, IB2 = 20mA RL = 6Ω 0.15 µs tr Rise Time 0.55 µs tstg Storage Time 2.5 µs tf Fall Time 2.5 µs

TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP145T/146T/147T Rev. C 4 Mechanical Dimensions TO220

TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor TIP145T/146T/147T © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP145T/146T/147T Rev. C 5