STL13NM60N STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications

Description

This device is a N-channel Power MOSFETs made using the second generation of MDmesh™ technology. This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram

  1. The value is rated according to R thj-case

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. The value is rated according to R thj-case
  2. Pulse width limited by safe operating area
  3. When mounted on FR-4 board of inch², 2oz Cu
  4. I SD ≤ 10 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS

Table 3. Thermal data

  1. When mounted on 1inch² FR-4 board, 2 oz Cu

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS. Table 6. Switching times

Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characterist ics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized B VDSS vs temperature Figure 7. Static drain-source on resistance

0 ID(A)

0.335 VGS=10V

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test Figure 17. Unclamped inductive wavefor m Figure 18. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 8. PowerFLAT™ 8x8 HV mechanical data

Figure 19. PowerFLAT™ 8x8 HV drawing mechanical data

Figure 20. PowerFLAT™ 8x8 HV recommended footprint

5 Revision history

Table 9. Document revision history 23-May-2011 1 First release.