MDF13N65B MGCHIP | Alldatasheet
Document overview
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Technical content
Features
VDS = 650V ID = 14A @ VGS = 10V RDS(ON) ≤ 0.46Ω @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching D G S TO-220F MDF Series
Jun. 2011 Version 1.3 MagnaChip Semiconductor Ltd. 2 MDF13N65B N-channel MOSFET 650V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status MDF13N65BTH -55~150oC TO-220F Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 650 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0 Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 μA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 7A 0.40 0.46 Ω Forward Transconductance gfs VDS = 30V, ID = 7A - 3.7 - S Dynamic Characteristics Total Gate Charge Qg VDS = 520V, ID = 14.0A, VGS = 10V(3) - 54 - nC Gate-Source Charge Qgs - 13 - Gate-Drain Charge Qgd - 21 - Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1.0MHz - 2400 - pF Reverse Transfer Capacitance Crss - 12.8 - Output Capacitance Coss - 243 - Turn-On Delay Time td(on) VGS = 10V, VDS = 325V, ID = 14.0A, RG = 25Ω(3) - 32 - nS Rise Time tr - 81 - Turn-Off Delay Time td(off) - 204 - Fall Time tf - 76 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS - 14 - A Source-Drain Diode Forward Voltage VSD IS = 14.0A, VGS = 0V - 1.4 V Body Diode Reverse Recovery Time trr IF = 14.A, dl/dt = 100A/μs(3) - 377 - nS Body Diode Reverse Recovery Charge Qrr - 8.2 - μC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=7.6mH, IAS=14.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Jun. 2011 Version 1.3 MagnaChip Semiconductor Ltd. 3 MDF13N65B N-channel MOSFET 650V Fig.5 Transfer Characteristics Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature Fig.6 Body Diode Forward Voltage Variation with Sourc e Current and Temperature 2 4 6 8 -55℃ 25℃ 150℃ * Notes ; 1. Vds=30V ID(A) VGS [V] 25℃150℃ ※ Notes : 1. VGS = 0 V 2.250s Pulse test IDR Reverse Drain Current [A] VSD, Source-Drain Voltage [V] 0 5 10 15 20 25 Notes 1. 250㎲ Pulse Test 2. TC=25℃ Vgs=4.5V =5.0V =5.5V =6.0V =6.5V =7.0V =7.5V =8.0V =10.0V =15.0V ID,Drain Current [A] VDS,Drain-Source Voltage [V] 0 3 6 9 12 15 18 21 24 27 30 33 36 0.5 0.6 0.7 0.8 0.9 VGS=10.0V VGS=20V RDS(ON) [Ω ] ID,Drain Current [A] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. VGS = 10 V 2. ID = 7 A RDS(ON), (Normalized) Drain-Source On-Resistance TJ, Junction Temperature [ o -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ BVDSS, (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature [ o
Jun. 2011 Version 1.3 MagnaChip Semiconductor Ltd. 4 MDF13N65B N-channel MOSFET 650V Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 0 10 20 30 40 50 60 130V 325V 520V ※ Note : ID = 14.0A VGS, Gate-Source Voltage [V] QG, Total Gate Charge [nC] Fig.10 Transient Thermal Response Curve 10 s 100 s 100 ms DC 10 ms 1 ms Operation in This Area is Limited by R DS(on) Single Pulse TJ=Max rated TC=25℃ ID, Drain Current [A] VDS, Drain-Source Voltage [V] ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC * Rθ JC(t) + TC RΘ JC=3.4℃ /W single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Zθ JC(t), Thermal Response t1, Rectangular Pulse Duration [sec]Fig.9 Maximum Safe Operating Area 1E-5 1E-4 1E-3 0.01 0.1 1 10 2000 4000 6000 8000 10000 single Pulse RthJC = 3.4℃ /W TC = 25℃ Power (W) Pulse Width (s) Fig.11 Single Pulse Maximum Power Dissipation 25 50 75 100 125 150 ID, Drain Current [A] TC, Case Temperature [℃ ] Fig.12 Maximum Drain Current vs. Case Temperature 1 10 1000 2000 3000 4000 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Notes ; 1. VGS = 0 V 2. f = 1 MHzCrss Coss Ciss Capacitance [pF] VDS, Drain-Source Voltage [V]
Jun. 2011 Version 1.3 MagnaChip Semiconductor Ltd. 5 MDF13N65B N-channel MOSFET 650V Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified Sym bol Min Nom Max A 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 C 0.33 0.63 D 15.47 16.13 E 9.60 10.71 e 2.54 F 2.34 2.84 G 6.48 6.90 L 12.24 13.72 L1 2.79 3.67 Q 2.52 2.96 Q1 3.10 3.50 ￠R 3.00 3.55
Jun. 2011 Version 1.3 MagnaChip Semiconductor Ltd. 6 MDF13N65B N-channel MOSFET 650V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry wit hout notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.