13N50L-TA3-T

13N50_11 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-362.G 13A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 13N50 is ideally suitable for high efficiency switch mode power supply, power factor co rrection, electronic lamp ballast based on half bridge topology. „ FEATURES * RDS(ON) =0.48Ω @VGS = 10V * Ultra low gate charge (typical 43nC ) * Low reverse transfer Capacitance ( C RSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness „ SYMBOL TO-220 TO-220F TO-220F1 „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 13N50L-TA3-T 13N50G-TA3-T TO-220 G D S Tube 13N50L-TF3-T 13N50G-TF3-T TO-220F G D S Tube 13N50L- TF1-T 13N50G-TF1-T TO-220F1 G D S Tube

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-362.G „ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 500 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current I D 13 A Pulsed Drain Current (Note 2) I DM 52 A Avalanche Current (Note 2) I AR 13 A Single Pulsed Avalanche Energy (Note 3) E AS 810 mJ Repetitive Avalanche Energy (Note 2) E AR 17 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) TO-220 PD 168 W TO-220F/TO-220F1 48 Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width lim ited by maximum junction temperature 3. L = 9.3mH, I AS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C 4. I SD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 θJC 0.74 °C/W TO-220F/TO-220F1 2.58

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-362.G „ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0V, ID = 250μA 500 V Drain-Source Leakage Current I DSS V DS = 500V, VGS = 0V 10 μA Gate-Source Leakage Current I GSS VGS = 30V, VDS = 0V 100 nA VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient BV△ DSS/△TJ ID=250mA,Referenced to 25°C 0.5 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID = 6.5A 0.42 0.48 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VDS=25V, VGS=0V, f=1.0MHz 1800 2300 pF Output Capacitance C OSS 245 320 pF Reverse Transfer Capacitance C RSS 25 35 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) VDD =250V, ID =13A, RG =25Ω (Note 1,2) 40 90 nS Turn-On Rise Time t R 140 290 nS Turn-Off Delay Time t D(OFF) 100 210 nS Turn-Off Fall Time t F 85 180 nS Total Gate Charge Q G VDS=400V, ID=13A, VGS=10 V (Note 1,2) 45 60 nC Gate-Source Charge Q GS 11 nC Gate-Drain Charge Q GD 22 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0V, IS = 13 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 13 A Maximum Pulsed Drain-Source Diode Forward Current ISM 52 A Reverse Recovery Time t rr V GS = 0V, IS = 13A, dIF / dt =100A/μs (Note 1) 290 nS Reverse Recovery Charge Q RR 2.6 μC Note: 1. Pulse Test : Pulse width ≤300μs, Duty cycle≤2% 2. Essentially independent of operating ambient temperature

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-362.G „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-362.G „ TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-362.G „ TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS(V) Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 530 100 150 200 250 300 0 100 300 400 500200 100 150 200 250 300 600 41 Drain Current, ID (A) Drain Current, ID (A) UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.