STD13N50DM2AG STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 16
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 DPAK package information
- 4.2 Packing information
Features
Order code VDS RDS(on ) max. ID STD13N50DM2AG 500 V 360 mΩ 11 A
- AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD13N50DM2AG Product summary Order code STD13N50DM2AG Marking 13N50DM2 Package DPAK Packing Tape and reel Automotive-grade N-channel 500 V, 320 mΩ typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package STD13N50DM2AG Datasheet DS12210 - Rev 4 - October 2019 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area.
Table 2. Thermal data
- When mounted on a 1-inch² FR-4, 2 oz Cu board
Table 3. Avalanche characteristics
2 Electrical characteristics
(TC = 25 °C unless otherwise specified). Table 4. Static
- Defined by design, not subject to production test.
Table 5. Dynamic Figure 14. Test circuit for gate
- C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 13. Test circuit for
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Normalized gate threshold vs temperature Figure 6. Normalized breakdown voltage vs temperature
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. STD13N50DM2AG
Package information
4.1 DPAK (TO-252) type A2 package information
Figure 19. DPAK (TO-252) type A2 package outline
Table 8. DPAK (TO-252) type A2 mechanical data
Figure 20. DPAK (TO-252) recommended footprint (dimensions are in mm)
4.2 DPAK (TO-252) packing information
Figure 21. DPAK (TO-252) tape outline
Figure 22. DPAK (TO-252) reel outline Table 9. DPAK (TO-252) tape and reel mechanical data
Revision history
Table 10. Document revision history 23-Jun-2017 1 First release. Table 4. Static, Table 5. Dynamic, Table 6. Switching times, Table 7. Source drain Modified Section 2.1 Electrical characteristics (curves). 27-Jun-2018 3 Updated Section 4 Package information. Modified Features table on cover page and Table 4. Static. Updated Section 4.1 DPAK (TO-252) type A2 package information.