STH13N120K5-2AG STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 H²PAK-2 package information
- 4.2 H²PAK-2 packing information
Features
Order code VDS RDS(on) max. ID PTOT STH13N120K5-2AG 1200 V 0.69 Ω 12 A 250 W
- AEC-Q101 qualified
- Industry’s lowest R DS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STH13N120K5-2AG Product summary(1) Order code STH13N120K5-2AG Marking 13N120K5 Package H²PAK-2 Packing Tape and reel 1. HTRB test was performed at 80% of V(BR)DSS according to AEC-Q101 rev. C. All other tests were performed according to AEC-Q101 rev. D. Automotive-grade N-channel 1200 V, 0.62 Ω typ., 12 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package STH13N120K5-2AG Datasheet DS12917 - Rev 5 - June 2020 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area.
- Pulse width limited by T J max.
Table 2. Thermal data
- When mounted on FR-4 board of 1 inch², 2oz Cu.
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) T able 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1200 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1200 V 1 µA VGS = 0 V, VDS = 1200 V, TC = 125 °C(1) 50 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A 0.62 0.69 Ω Defined by design, not subject to production test. Table 4. Dynamic
- Energy-related is defined as a constant equivalent capacitance giving the same stored energy as C oss when VDS increases
Table 5. Switching times Figure 19. Switching time waveform)
Electrical characteristics
Table 6. Source-drain diode Table 7. Gate-source Zener diode ficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance
Figure 7. Typical capacitance characteristics Figure 8. Typical output capacitance stored energy Figure 9. Normalized gate threshold vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Normalized breakdown voltage vs temperature Figure 12. Typical reverse diode forward characteristics
4 I SD (A)
Figure 13. Maximum avalanche energy vs temperature
3 Test circuits
Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 H²PAK-2 package information
Figure 20. H²PAK-2 package outline
Package information
Table 8. H²PAK-2 package mechanical data Figure 21. H²PAK-2 recommended footprint
4.2 H²PAK-2 packing information
Figure 22. Tape outline
Figure 23. Reel outline Table 9. Tape and reel mechanical data
Revision history
Table 10. Document revision history 14-Feb-2019 1 First release. Updated title and features in cover page. Section 2.1 Electrical characteristics (curves). Table 4. Dynamic, Table 5. Switching times and Table 6. Source-drain diode. Modified Section 2.1 Electrical characteristics (curves). 11-Mar-2020 4 Updated device summary in cover page. 16-Jun-2020 5 Updated Section 4 Package information.