13N10 VBSEMI | Alldatasheet

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Technical content

N-Channel 100-V (D-S) MOSFET

FEATURES

  • TrenchFET ® Power MOSFET  175 °C Junction Tempe rature  Low Thermal Resistance Package  100 % R g Tested

APPLICATIONS

 Isolated DC/DC Converters PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω)I D (A) 100 0.092 at VGS = 10 V 18 N-Channel MOSFET G D S Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mount ed on 1" square PCB (FR-4 material). ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless othe rwise noted Parameter Symbol Limit Unit Drain-Source V oltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID A TC = 125 °C 15 Pulsed Drain Current IDM 68 Avalanche Current L = 0.1 mH IAS 18 Single Pulse Avalanche Energyb EAS 200 mJ Maximum Power Dissipationb TC = 25 °C PD W TA = 25 °Cd 3.75 Operating Junction and Storage Te mperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit J unction-to-Ambient PCB Mount (TO-263)d RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.4 RoHS COMPLIANT T O-220AB Top View GD S 105 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 13N10 A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Abso lute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise no ted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 120 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A 0.127 ΩVGS = 10 V, ID = 20 A, TJ = 125 °C 0.110 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.121 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 25 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 930 pFOutput Capacitance Coss 260 Reverse Transfer Capacitance Crss 110 Total Gate Chargec Qg VDS = 100 V, VGS = 10 V, ID = 65 A nCGate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg 0.5 1.7 3.3 Ω Tur n-On Delay Timec td(on) VDD = 100 V, RL = 1.5 Ω ID ≅ 65 A, VGEN = 10 V, Rg = 2.5 Ω nsRise Timec tr 120 Turn-Off Delay Timec td(off) 25 Fall Timec tf 50 Source-Drain Diode Ratings and Ch aracteristics TC = 25 °Cb Continuous Current IS 18 A Pulsed Current ISM 68 Forward Voltagea VSD IF = 65 A, VGS = 0 V 1.0 1.5 V Reverse Recover y Time trr IF = 50 A, di/dt = 100 A/µs 130 200 ns Peak Reve rse Recovery Current IRM(REC) 81 2A Reverse Recovery Charge Qrr 0.52 1.2 µC 4.8 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 13N10 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics Transcond uctance Capacitance 0 2468 10 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 6 V 2 V - Drain Current (A)I D 5 V 3 V 120 150 180 0 20 40 60 80 100 120 - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 200 400 600 800 1000 1200 1400 0 20 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics On-Resistance vs. Drain Curr ent Gate Charge 100 120 140 012 34567 VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 25 °C - 55 °C TC = 125 °C 0.00 0.10 0.20 0.30 0.40 0 20 40 60 80 100 120 ID - Drain Current (A) VGS = 10 V - On-Resistance (Ω)rDS(on) 0 25 50 75 100 125 150 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 100 V ID = 65 A 40 60 80 100 120 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 13N10 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless othe rwise noted On-Resistance vs. Junction Temperature Aval anche Current vs. Time rDS(on) - On-Resistance (Normalized) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 20 A tin (s) 1000 0.00001 0.001 0.1 1 0.1 (A) IDav 0.01 IAV (A) at TA = 150 °C 100 0.0001 IAV (A) at TA = 25 °C Source-Drain Diode F orward Voltage Drain Source Breakdown vs. Junction Temperature VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 100 0.3 0.6 0.9 1.2 TJ = 25 °CTJ = 150 °C 180 190 200 210 220 230 240 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) (V)V(BR)DSS ID = 1.0 mA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 13N10 A ll data sheet.com

Maximum Avalanche and Drain Current vs. Case Temp erature 0 25 50 75 100 125 150 175 TC - Ambient Temperature (°C) - Drain Current (A)I D Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS minimum V GS at which rDS(on) is specified 1000 0.1 1 10 1000 0.1 100 TC = 25 °C Single Pulse - Drain Current (A)I D 1 ms 10 ms 100 ms DC 10 µs 100 µs 100 rDS(on) Limited* Normalized Thermal Transient Impedanc e, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 13N10 A ll data sheet.com

  • M = 1.32 mm to 1.62 mm (dim ension inc l uding protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 13N10 A ll data sheet.com