1354154 VISHAY | Alldatasheet

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Technical content

Document Number: 73216 S-80581-Rev. E, 17-Mar-08 www.vishay.com N-Channel 20-V (D-S) Fast Switching MOSFET

FEATURES

  • Halogen-free Option Available  TrenchFET ® Gen II Power MOSFET for Ultra Low On-Resistance  New Low Thermal Resistance PowerPAK ® Package with Low 1.07 mm Profile  100 % Rg Tested

APPLICATIONS

 Synchronous Rectification  Point-of-Load Converters  Protection Devices  Hot Swap PRODUCT SUMMARY VDS (V) R DS(on) (Ω)I D (A) Q g (Typ.) 0.0049 at VGS = 10 V 22 200.0061 at VGS = 4.5 V 19.7 S S S G D D D D 3.30 mm 3.30 mm PowerPAK 1212-8 Bottom View Ordering Information: Si7108DN-T1-E3 (Lead (Pb)-free) Si7108DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The e nd of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a solder ing iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 16 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID 22 14 A TA = 70 °C 17.6 11.2 Pulsed Drain Current IDM 60 Continuous Source Current (Diode Conduction)a IS 3.2 1.3 Single Avalanche Current L = 0 1 mH IAS 22 Single Avalanche Energy EAS 24 mJ Maximum Power Dissipationa TA = 25 °C PD 3.8 1.5 WTA = 70 °C 2.0 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)b, c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 24 33 °C/WSteady State 65 81 Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 RoHS COMPLIANT

www.vishay.com Document Number: 73216 S-80581-Rev. E, 17-Mar-08 Vishay Siliconix Si7108DN Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 16 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µAVDS = 20 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) V DS ≥ 5 V, VGS = 10 V 40 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 22 A 0.0041 0.0049 ΩVGS = 4.5 V, ID = 19.7 A 0.005 0.0061 Forward Transconductancea gfs VDS = 15 V, ID = 22 A 88 S Diode Forward Voltagea VSD IS = 3.2 A, VGS = 0 V 0.75 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 22 A 20 30 nCGate-Source Charge Qgs 6.3 Gate-Drain Charge Qgd 4.9 Gate Resistance Rg f = 1 MHz 0.7 1.4 2.1 Ω Tur n-On Delay Time td(on) VDD = 20 V, RL = 20 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 10 15 ns Rise Time tr 10 15 Turn-Off Delay Time td(off) 60 130 Fall Time tf 10 15 Source-Drain Reverse Recovery Time trr IF = 3.2 A, di/dt = 100 A/µs 30 60 Reverse Recovery Charge Qrr 20 36 nC Output Characteristics VGS = 10 thru 4 V 3 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D Transfer Characteristics 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D

Document Number: 73216 S-80581-Rev. E, 17-Mar-08 www.vishay.com Vishay Siliconix Si7108DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0 1 02 03 04 05 06 0 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 1 02 03 04 05 0 VDS = 10 V ID = 22 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) V GS VSD - Source-to-Drain Voltage (V) TJ = 25 °C - Source Current (A)I S TJ = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 500 1000 1500 2000 2500 3000 048 1 2 1 6 2 0 Coss Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 22 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) 0.000 0.003 0.006 0.009 0.012 0.015 02468 1 0 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) ID = 22 A

www.vishay.com Document Number: 73216 S-80581-Rev. E, 17-Mar-08 Vishay Siliconix Si7108DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - T emperature (°C) Single Pulse Power, Junction-to-Ambient 0.01 600 Time (s) Power (W) 0.1 10 100 Safe Operating Area 100 0.1 1 10 100 0.01 TA = 25 °C Single Pulse - Drain Current (A)ID 0.1 ID(on) Limited BVDSS Limited P(t) = 10 DC P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* IDM Limited Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - T A = PDMZthJA(t) Notes: 4. Surface Mounted PDM

Document Number: 73216 S-80581-Rev. E, 17-Mar-08 www.vishay.com Vishay Siliconix Si7108DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Pr oducts may be manufactured at one of several qualified locatio ns. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73216. Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 110-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance

Document Number: 71656 www.vishay.com Revison: 03-May-10 1

Package Information

PowerPAK® 1212-8, (SINGLE/DUAL) MILLIMETERS INCHES A1 0.00 - 0.05 0.000 - 0.002 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 TYP. 0.0185 TYP. D5 2.3 TYP. 0.090 TYP. E4 0.34 TYP. 0.013 TYP. e 0.65 BSC 0.026 BSC K 0.86 TYP. 0.034 TYP. M 0.125 TYP. 0.005 TYP. ECN: S10-0951-Rev. J, 03-May-10 DWG: 5882 3. Dimensions exclusive of mold flash and cutting burrs Notes: Inch will govern Dimensions exclusive of mold gate burrs Backside View of Single Pad Backside View of Dual Pad Detail Z D1 c A 1 8 H θ θ e b θ θ E2 L b D3(2x) Z KK1 W M HK L D2 D4 D E H

and electrical performance is discussed. package, with the same level of thermal performance. ation, the PowerPAK 1212-8 is a good option. same pin-outs as the single and dual PowerPAK SO-8. contact to the drain pad on the PowerPAK package. ment in thermal performance. Figure 1. PowerPAK 1212 Devices

Document Number: 72597 www.vishay.com Revision: 21-Jan-08 7 APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.088 (2.235) Recommended Minimum Pads Dimensions in Inches/(mm) 0.152 (3.860) 0.094 (2.390) 0.039 (0.990) 0.068 (1.725) 0.010 (0.255) 0.016 (0.405) 0.026 (0.660) 0.025 (0.635) 0.030 (0.760) Return to Index Return to Index

Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1 Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA AR E SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of pro ducts for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in gene ric applications. Such statements are not binding statements about the suitability of products for a partic ular application. It is the customer’s responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. Parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s term s and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product co uld result in person al injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.