12TTS08PBF

12TTS08PBF IRF | Alldatasheet

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The 12TTS08... SAFEIR series of silicon con- trolled rectifiers are specifically designed for me- dium power switching and phase control applica- tions. The glass passivation technology used has reliable operation up to 125° C junction tempera- ture. Typical applications are in input rectification and crow-bar (soft start) and these products are de- signed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Major Ratings and Characteristics Capacitive input filter TA = 55°C, TJ = 125°C, 13.5 17 A common heatsink of 1°C/W Output Current in Typical Applications Applications Single-phase Bridge Three-phase Bridge Units IT(AV) Sinusoidal 8 A waveform IT(RMS) 12.5 A VRRM/ VDRM 800 V ITSM 140 A VT @ 8 A, TJ = 25°C 1.2 V dv/dt 150 V/µs di/dt 100 A/µs T J range - 40 to 125 °C Characteristics Values Units Bulletin I2198 rev. A 09/05 PHASE CONTROL SCR Lead-Free ("PbF" suffix) SAFEIR Series 12TTS08PbF VT < 1.2V @ 8A ITSM = 140A VRRM = 800V www.irf.com TO-220 Package Outline

Bulletin I2198 rev. A 09/05 www.irf.com VRRM, maximum V DRM , maximum I RRM/IDRM Part Number peak reverse voltage peak direct voltage 125°C VV m A 12TTS08PbF 800 800 1.0 Voltage Ratings IT(AV) Max. Average On-state Current 8 A @ T C = 108° C, 180° conduction half sine wave IT(RMS)Max. RMS On-state Current 12.5 ITSM Max. Peak One Cycle Non-Repetitive 120 A 10ms Sine pulse, rated VRRM applied, TJ = 125°C Surge Current 140 10ms Sine pulse, no voltage reapplied, TJ = 125°C I2t Max. I 2t for fusing 72 A 2s 10ms Sine pulse, rated V RRM applied, TJ = 125°C 100 10ms Sine pulse, no voltage reapplied, T J = 125°C I2√t Max. I 2√t for fusing 1000 A 2√s t = 0.1 to 10ms, no voltage reapplied, T J = 125°C VTM Max. On-state Voltage Drop 1.2 V @ 8A, T J = 25°C rt On-state slope resistance 16.2 m Ω TJ = 125°C VT(TO) Threshold Voltage 0.87 V IRM/IDM Max.Reverse and Direct 0.05 mA T J = 25 °C Leakage Current 1.0 T J = 125 °C IH Typ. Holding Current 30 mA Anode Supply = 6V, Resistive load, Initial I T=1A IL Max. Latching Current 50 mA Anode Supply = 6V, Resistive load dv/dt Max. rate of rise of off-state Voltage 150 V/µs T J = 25°C di/dt Max. rate of rise of turned-on Current 100 A/µs Absolute Maximum Ratings Parameters Values Units Conditions VR = rated VRRM/ VDRM

Bulletin I2198 rev. A 09/05 www.irf.com Triggering PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 20 mA Anode supply = 6V, resistive load, T J = - 65°C to trigger 15 Anode supply = 6V, resistive load, T J = 25°C

10 Anode supply = 6V, resistive load, T J = 125°C

VGT Max. required DC Gate Voltage 1.2 V Anode supply = 6V, resistive load, T J = - 65°C to trigger 1 Anode supply = 6V, resistive load, T J = 25°C

0.7 Anode supply = 6V, resistive load, T J = 125°C

VGD Max. DC Gate Voltage not to trigger 0.2 T J = 125°C, VDRM = rated value IGD Max. DC Gate Current not to trigger 0.1 mA T J = 125°C, VDRM = rated value Parameters Values Units Conditions Switching Parameters Values Units Conditions tgt Typical turn-on time 0.8 µs T J = 25°C trr Typical reverse recovery time 3 T J = 125°C tq Typical turn-off time 100 TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 RthJC Max. Thermal Resistance Junction 1.5 °C/W DC operation to Case RthJA Max. Thermal Resistance Junction 62 to Ambient R thCS Typ. Thermal Resistance Case 0.5 Mounting surface, smooth and greased to Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5) Max. 12 (10) Case Style TO-220 Marking Device 12TTS08 Case style TO-220 Thermal-Mechanical Specifications Parameters Values Units Conditions Kg-cm (Ibf-in)

Bulletin I2198 rev. A 09/05 www.irf.com Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 1 - Current Rating Characteristics 100 105 110 115 120 125 02468 1 0 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction Angle Average On-s tate Current (A) 12T TS 08 R (DC) = 1.5 K/ WthJC 100 105 110 115 120 125 02468 1 0 1 2 1 4 DC 30° 60° 90° 120° 180° Average On-s tate Current (A) Maximum Allowable Cas e T emperature (°C) Conduction P eriod 12T T S 08 R (DC) = 1.5 K/ WthJC 0123456789 RM S Lim i t Conduction Angle Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) 180° 120° 90° 60° 30° 12T T S 08 T = 125°CJ 02468 1 0 1 2 1 4 DC 180° 120° 90° 60° 30° RM S Li m it Conduction Period Max imum Average On-s tate P ower L os s (W) Average On-s tate Current (A) 12T T S08 T = 125°C J 100 110 120 130 11 0 1 0 0 Number Of E qual Amplitude H alf Cycle Current P uls es (N) At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM Peak Half S ine Wave On-state Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 12T T S08 100 110 120 130 140 150 0.01 0.1 1 Pe a k Ha lf Sine Wave On-s tate Current (A) P uls e T rain Duration (s ) Maximum Non R epetitive Surge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T = 125°C No Voltage R eappli ed R ated V R eappliedRRM J 12T T S08

Bulletin I2198 rev. A 09/05 www.irf.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 100 1000 0.5 1 1.5 2 2.5 3 3.5 T = 2 5 ° CJ Ins tantaneous On-s tate Current (A) In st a n t a n e o u s O n - st a t e V o lt a g e ( V ) T = 125°CJ 12T T S08 0.01 0.1 0.0001 0.001 0.01 0.1 1 Sq u a r e W a v e Pu l se D u r a t i o n ( s) St e a d y St a t e V a l u e (DC Operation) Si n g l e Pu l se D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 thJCT rans ient T hermal I mpedance Z (°C/W) 12TT S08

Bulletin I2198 rev. A 09/05 www.irf.com INTERNATIONAL RECTIFIER ASSEMBLY LOT CODE EXAMPLE: IRMX Assembly Line ASSEMBLED ON WW 19, 2001 THIS IS A 12TTS08 LOT CODE 1789 LOGO P = LEAD-FREE PART NUMBER DATE CODE YEAR 1 = 2001 WEEK 19 Part Marking Information Outline Table 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) MAX. DIA. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) TERM 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. 5.08 (0.20) REF. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.64 (0.10) 2.04 (0.080) MAX. Conform to JEDEC outline TO-220AB Dimensions in millimeters and (inches)

Bulletin I2198 rev. A 09/05 www.irf.com

12 T T S 08 PbF

Ordering Information Table 1 - Current Rating (12 = 12.5A) 2 - Circuit Configuration T = Single Thyristor T = TO-220 4 - Type of Silicon S = Standard Recovery Rectifier 5 - Voltage Rating (08 = 800V) 6 - y none = Standard Production y PbF = Lead-Free IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/05 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. (G) 3 (A) 1 (K)