12TTS08

12TTS08 IRF | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Preliminary Data Sheet I2144 11/97 PHASE CONTROL SCR SAFEIR Series 12TTS08 VT < 1.2V @ 8A ITSM = 140A VRRM = 800V Description/Features The 12TTS08 SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reli- able operation up to 125° C junction temperature. Typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Major Ratings and Characteristics TO-220AC Capacitive input filter TA = 55°C, TJ = 125°C, 13.5 17 A common heatsink of 1°C/W Output Current in Typical Applications Applications Single-phase Bridge Three-phase Bridge Units IT(AV) Sinusoidal 8 A waveform IT(RMS) 12.5 A VRRM / VDRM 800 V ITSM 140 A VT @ 8 A, TJ = 25°C 1.2 V dv/dt 150 V/µs di/dt 100 A/µs T J range - 40 to 125 °C Characteristics 12TTS08 Units Also available in SMD-220 package (series 12TTS..S) Package Outline

Preliminary Data Sheet I2144 11/97 VRRM , maximum V DRM , maximum I RRM /IDRM Part Number peak reverse voltage peak direct voltage 1 25°C VV m A 12TTS08 800 800 1.0 Voltage Ratings IT(AV) Max. Average On-state Current 8 A @ T C = 108° C, 180° conduction half sine wave IT(RMS) Max. RMS On-state Current 12.5 ITSM Max. Peak One Cycle Non-Repetitive 120 A 10ms Sine pulse, rated VRRM applied, TJ = 125°C Surge Current 140 10ms Sine pulse, no voltage reapplied, TJ = 125°C I2t Max. I 2t for fusing 72 A 2s 10ms Sine pulse, rated VRRM applied, TJ = 125°C 100 10ms Sine pulse, no voltage reapplied, TJ = 125°C I2√t Max. I2√t for fusing 1000 A 2√s t = 0.1 to 10ms, no voltage reapplied, TJ = 125°C VTM Max. On-state Voltage Drop 1.2 V @ 8A, T J = 25°C rt On-state slope resistance 16.2 m Ω TJ = 125°C VT(TO) Threshold Voltage 0.87 V IRM /IDM Max.Reverse and Direct 0.05 mA T J = 25 °C Leakage Current 1.0 T J = 125 °C IH Typ. Holding Current 30 mA Anode Supply = 6V, Resistive load, Initial I T=1A IL Max. Latching Current 50 mA Anode Supply = 6V, Resistive load dv/dt Max. rate of rise of off-state Voltage 150 V/µs T J = 25°C di/dt Max. rate of rise of turned-on Current 100 A/µs Absolute Maximum Ratings Parameters 12TTS08 Units Conditions VR = rated VRRM / VDRM

Preliminary Data Sheet I2144 11/97 Triggering PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 20 mA Anode supply = 6V, resistive load, T J = - 65°C to trigger 15 Anode supply = 6V, resistive load, T J = 25°C

10 Anode supply = 6V, resistive load, T J = 125°C

VGT Max. required DC Gate Voltage 1.2 V Anode supply = 6V, resistive load, T J = - 65°C to trigger 1 Anode supply = 6V, resistive load, T J = 25°C

0.7 Anode supply = 6V, resistive load, T J = 125°C

VGD Max. DC Gate Voltage not to trigger 0.2 T J = 125°C, VDRM = rated value IGD Max. DC Gate Current not to trigger 0.1 mA T J = 125°C, VDRM = rated value Parameters 12TTS08 Units Conditions Switching Parameters 12TTS08 Units Conditions tgt Typical turn-on time 0.8 µs T J = 25°C trr Typical reverse recovery time 3 T J = 125°C tq Typical turn-off time 100 TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 RthJC Max. Thermal Resistance Junction 1.5 °C/W DC operation to Case R thJA Max. Thermal Resistance Junction 62 to Ambient R thCS Typ. Thermal Resistance Case 0.5 Mounting surface, smooth and greased to Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5) Max. 12 (10) Case Style TO-220AC Thermal-Mechanical Specifications Parameters 12TTS08 Units Conditions Kg-cm (Ibf-in)

Preliminary Data Sheet I2144 11/97 Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 1 - Current Rating Characteristics 100 105 110 115 120 125 02468 1 0 30° 60° 90° 120° 180° Maximum Allowable Case Temperature (°C) Conduction Angle Average On-state Current (A) 12TTS08 R (DC) = 1.5 K/WthJC 100 105 110 115 120 125 02468 1 0 1 2 1 4 DC 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period 12TTS08 R (DC) = 1.5 K/WthJC 0123456789 RMS Limit Conduction Angle Maximum Average On-state Power Loss (W) Average On-state Current (A) 180° 120° 90° 60° 30° 12TTS08 T = 125°CJ 02468 1 0 1 2 1 4 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) 12TTS08 T = 125°C J 100 110 120 130 11 0 1 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) At Any Rated Load Condition And With Rated V Applied Following Surge.RRM Peak Half Sine Wave On-state Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 12TTS08 100 110 120 130 140 150 0.01 0.1 1 Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V ReappliedRRM J 12TTS08

Preliminary Data Sheet I2144 11/97 Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 100 1000 0 . 511 . 522 . 533 . 5 T = 25°CJ Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125°CJ 12TTS08 0.01 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Steady State Value (DC Operation) Single Pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 thJCTransie nt Thermal Impedance Z (°C/W) 12TTS08

Preliminary Data Sheet I2144 11/97 Outline Table Dimensions in millimeters (and inches) 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) MAX. DIA. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) TERM 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. 5.08 (0.20) REF. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.84 (0.10) 2.04 (0.080) MAX.

12 T T S 08

2 - Circuit Configuration: T = Single Thyristor T = TO-220AC 4 - Type of Silicon: S = Converter Grade 5 - Voltage code: Code x 100 = VRRM Ordering Information Table (G) 3 (A) 1 (K)

Preliminary Data Sheet I2144 11/97 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A Tel: (310) 322-3331 Fax: (310) 322-3332 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020 Fax: ++ 44 1883 733408 IR CANADA: 7231 Victoria Park Ave., Suite #201, Markham, Ontario L3R 2Z8 Tel: (905) 475 1897. Fax: (905) 475 8801 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 Fax: ++ 49 6172 965933 IR ITALY:Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 4510111 Fax: ++ 39 11 4510220 IR FAR EAST:K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 Fax: 81 3 3983 0642 IR SOUTHEAST ASIA:315 Outram Road, # 10-02 Tan Boon Liat Building, SINGAPORE 0316. Tel: 65 221 8371. Fax: 65 221 8372. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice 11/97