12TQ200 SMCDIODE | Alldatasheet

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Data Sheet N0664 Rev. B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 12TQ200 12TQ200S 12TQ200/S SCHOTTKY RECTIFIER Features Applications 12TQ200 12TQ200S TO-220AC D2PAK Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR - 200 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=136°C, rectangularwaveform 15 A PeakOneCycleNon-RepetitiveSurge Current IFSM 8.3ms,HalfSinepulse 276 A  Switching power supply  Redundant power subsystems  Converters  Free-Wheeling diodes  Reverse battery protection  175℃ TJ operation  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  Low forward voltage drop  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Terminals finish: 100% Pure Tin  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request

Data Sheet N0664 Rev. B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 12TQ200 12TQ200S * Pulsewidth <300µs, duty cycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctionto Case RJC DCoperation 2.0 C/W TypicalThermalResistance CasetoHeatSink RCS Mountingsurface,smoothand greased(onlyforTO-220) 0.50 C/W CaseStyle TO-220ACD2PAK Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @15A,Pulse,TJ =25C 0.90 0.92 V VF2 @15A,Pulse,TJ =125C 0.74 0.76 V ReverseCurrent* IR1 @VR =ratedVR TJ =25℃ 0.0002 0.55 mA IR2 @VR =ratedVR TJ =125℃ 0.1 7 mA JunctionCapacitance CT @VR =5V,TC =25℃ fSIG =1MHz 250 300 pF VoltageRateofChange dv/dt - - 10,000 V/μs Thermal-Mechanical Specifications: Tube Specification Tube Specification(TO-220AC) Device Package Weight Shipping 12TQ200 TO-220AC 1.8g 50pcs/tube 12TQ200S D²PAK 1.85g 800pcs/reel

Data Sheet N0664 Rev. B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 12TQ200 12TQ200S Ratings and Characteristics Curves

Data Sheet N0664 Rev. B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 12TQ200 12TQ200S Marking Diagram Carrier Tape Specification D2PAK Symbol Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 WhereXXXXX isYYWWL 12 =ForwardCurrent (12A) TQ =DeviceType 200 =ReverseVoltage(200V) S =Package type SSG = SSG YY =Year WW =Week L =Lot Number Cautions：Moldingresin Epoxy resinUL:94V-0

Data Sheet N0664 Rev. B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 12TQ200 12TQ200S Mechanical Dimensions TO-220AC Symbol Dimensionsinmillimeters Min. Typical Max. A 3.56 - 4.83 A1 0.51 - 1.40 A2 2.03 - 2.92 b 0.38 - 1.02 b1 1.14 - 1.78 c 0.31 - 0.61 D 14.22 - 16.51 D1 8.38 - 9.42 E1 9.65 10.16 10.67 e1 - 5.08 - H1 5.84 - 6.86 L 12.70 - 14.73 L1 - - 6.35 ΦP - 3.56 - Mechanical Dimensions D2PAK Symbol Dimensionsinmillimeters Min. Max. A 4.06 4.83 A1 0 0.26 b 0.51 0.99 b1 1.14 1.78 c 0.31 0.74 c1 1.14 1.65 D 8.38 8.65 D1 6.86 E1 6.22 E2 9.65 10.67 e 2.54BSC H 14.60 15.88 L 1.78 2.80 L1 - 1.68 L2 - 1.78 L3 0.255BSC Θ 0 8°

Data Sheet N0664 Rev. B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 12TQ200 12TQ200S DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsalesdepartment forthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment,medical equipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorbymeansof users’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentorany othercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing) Co.,Ltdassumesno responsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuits describedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceoranysecondary damageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics(Nanjing) Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC- SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwillhinder maintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythirdparty.When exportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsandregulations..