12SQ045 SMC | Alldatasheet
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Technical content
Technical Data Green Products Data Sheet N0005, Rev. A
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12SQ045 12SQ045 SCHOTTKY BARRIER RECTIFIER Applications： z DC-DC converters z AC adapter z High frequency rectification circuit z Bypass diodes z Photovoltaic Solar cell Protection Schottky Rectifier Features: z Super-high speed & low noise switching z Low voltage drop z This is a Pb − Free Device z All SMC parts are traceable to the wafer lot z Additional testing can be offered upon request Mechanical Dimensions: In Inches/ mm R-6
Technical Data Green Products Data Sheet N0005, Rev. A
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12SQ045 Marking Diagram: Where XXXXX is YYWWL 12 = Forward Current (12A) S = Package Type Q = Device Type 045 = Reverse Voltage (45V) SSG = SSG YY = Year WW = Week L = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping 12SQ045 R-6 (Pb-Free) 500pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Rating: Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage VRRM - 45 V Max. average forward current I F(AV) R- load, Ta=25 ℃ 12 A Surge(Non-repetitive) Forward Current IFSM 8.3ms single half sine-wave 275 A
Technical Data Green Products Data Sheet N0005, Rev. A
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12SQ045 Electrical Characteristics（Ta=25℃ Unless otherwise specified） Characteristics Symbol Conditions Max. Unit Peak Forward Voltage V FM I FM=12.0A,Ta=25℃ 0.55 V IRRM1 Ta=25 ℃ 0.5 Peak Reverse Current IRRM2 VRM=VRRM Ta=100℃ 20 mA R θJ-c Between junction and case 3.0 Thermal Resistance(Typical) R θJ-L Between junction and lead 2.0 /W℃ Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature at reduced reverse voltage at reduced reverse voltage in DC forward mode T J VR≤80%VRRM VR≤50%VRRM -55 to +150 -55 to +180 -55 to +200 Max. Storage Temperature T stg - -55 to +150 °C Approximate Weight wt - 2.24 g Case Style R-6
Technical Data Green Products Data Sheet N0005, Rev. A
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12SQ045 100 Forward Voltage Drop(V) Instantaneous Forward Current(A) 0.001 0.01 0.1 100 10 15 20 25 30 35 40 45 R everse Voltage (% ) Reverse Current (MA) 100 1000 10000 0 5 10 15 20 25 30 35 40 R everse Voltage-VR (V) Junction Capacitance-CT(PF) Fig.2-Typical Reverse Characteristics Fig.3-Typical Instantaneous Forward Voltage Characteristics TJ=25℃ TJ=25℃ TJ=25℃ TJ=125℃ Fig.1-Typical Junction Capacitance
Technical Data Green Products Data Sheet N0005, Rev. A
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12SQ045 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..