12P10G-TM3-T

12P10_11 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-262.B 9.4A, 100V P-CHANNEL POWER MOSFET „ DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. „ FEATURES * RDS(ON) = 0.29Ω @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 1.Gate 3.Source 2.Drain „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 12P10L-TM3-T 12P10G-TM3-T TO-251 G D S Tube 12P10L-TN3-R 12P10G-TN3-R TO-252 G D S Tape Reel 12P10L-TQ2-R 12P10G-TQ2-R TO-263 G D S Tape Reel 12P10L-TQ2-T 12P10G-TQ2-T TO-263 G D S Tube

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-262.B „ ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -100 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current I D -9.4 A Pulsed Drain Current (Note 2) I DM -37.6 A Avalanche Current (Note 2) I AR -9.4 A Single Pulsed Avalanche Energy (Note 3) E AS 370 mJ Repetitive Avalanche Energy (Note 2) E AR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -6.0 V/ns Power Dissipation TO-251/ TO-252 PD 50 W TO-263 65 Junction Temperature T J +150 ℃ Storage Temperature T STG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by T J(MAX) L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-251/ TO-252 θJA 110 ℃/W TO-263 62.5 Junction to Case TO-251/ TO-252 θJC 2.5 ℃/W TO-263 2.31

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-262.B „ ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0 V, ID=-250µA -100 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=-250µA,Referenced to 25°C -0.1 V/°C Drain-Source Leakage Current I DSS V DS=-100V, VGS=0V -1 µA Gate-Source Leakage Current I GSS V DS=0V, VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=-250µA -2.0 -4.0 V Static Drain-Source On-Resistance R DS(ON) V GS=-10V, ID=-4.7A 0.24 0.29 Ω Forward Transconductance g FS V DS =-40V, ID=-4.7A (Note 1) 6.3 S DYNAMIC PARAMETERS Input Capacitance C ISS VDS=-25V, VGS=0V, f=1.0MHz 620 800 pF Output Capacitance C OSS 220 290 pF Reverse Transfer Capacitance C RSS 65 85 pF SWITCHING PARAMETERS Total Gate Charge Q G VDS=-80V, ID=-11.5A, VGS= - 1 0 V ( N o t e 1 , 2 ) 21 27 nC Gate Source Charge Q GS 4.6 nC Gate Drain Charge Q GD 11.5 nC Turn-ON Delay Time t D(ON) VDD=-50V, ID=-11.5A, RG=25Ω(Note 1, 2) 15 40 ns Turn-ON Rise Time t R 160 330 ns Turn-OFF Delay Time t D(OFF) 35 80 ns Turn-OFF Fall-Time t F 60 130 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD V GS=0V, IS=-9.4A -4.0 V Maximum Body-Diode Continuous Current I S -9.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM -37.6 A Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% Note: 2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-262.B „ TEST CIRCUITS AND WAVEFORMS L VDD VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period Compliment of D.U.T. (N-Channel) Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-262.B „ TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms 50kΩ 0.3μF DUT VDS Same Type as D.U.T. -10V0.2μF 12V Charge QGS QGD QG VGS -3mA VGS Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-262.B „ TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.