12P10

12P10 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 12P10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-262.a 100V P-CHANNEL MOSFET „ DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. „ FEATURES * RDS(ON) = 0.29Ω @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 1.Gate 3.Source 2.Drain Lead-free: 12P10L Halogen-free: 12P10G „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Halogen Free Package 1 2 3 Packing 12P10-TN3-R 12P10L-TN3-R 12P10G-TN3-R TO-252 G D S Tape Reel 12P10-TN3-T 12P10L-TN3-T 12P10G-TN3-T TO-252 G D S Tube

12P10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-262.a „ ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -100 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current I D -9.4 A Pulsed Drain Current (Note 2) I DM -37.6 A Avalanche Current (Note 2) I AR -9.4 A Single Pulsed Avalanche Energy (Note 3) E AS 370 mJ Repetitive Avalanche Energy (Note 2) E AR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -6.0 V/ns Power Dissipation T a= 25°C 50 W Derate above 25°C PD 0.4 W/°C Junction Temperature T J +150 ℃ Storage Temperature T STG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by T J(MAX) L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to-Ambient θJA 110 ℃/W Junction-to-Case θJC 2.5 ℃/W „ ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0 V, ID=-250µA -100 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=-250µA, Referenced to 25°C -0.1 V/°C Drain-Source Leakage Current I DSS V DS=-100V, VGS=0V -1 µA Gate-Source Leakage Current I GSS V DS=0V, VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=-250µA -2.0 -4.0 V Static Drain-Source On-Resistance R DS(ON) V GS=-10V, ID=-4.7A 0.24 0.29 Ω Forward Transconductance g FS V DS =-40V, ID=-4.7A (Note 1) 6.3 S DYNAMIC PARAMETERS Input Capacitance C ISS 620 800 pF Output Capacitance C OSS 220 290 pF Reverse Transfer Capacitance C RSS VDS=-25V, VGS=0V, f=1.0MHz 65 85 pF SWITCHING PARAMETERS Total Gate Charge Q G 21 27 nC Gate Source Charge Q GS 4.6 nC Gate Drain Charge Q GD VDS=-80V, ID=-11.5A, VGS=-10V(Note 1, 2) 11.5 nC Turn-ON Delay Time t D(ON) 15 40 ns Turn-ON Rise Time t R 160 330 ns Turn-OFF Delay Time t D(OFF) 35 80 ns Turn-OFF Fall-Time t F VDD=-50V, ID=-11.5A, RG=25Ω(Note 1, 2) 60 130 ns

12P10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-262.a „ ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD V GS=0V, IS=-9.4A -4.0 V Maximum Body-Diode Continuous Current I S -9.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM -37.6 A Body Diode Reverse Recovery Time t RR 110 ns Body Diode Reverse Recovery Charge Q RR VGS=0V, IS=-11.5A, dIF/dt=100A/s(Note 4) 0.47 nC Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% Note: 2. Essentially independent of operating temperature

12P10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-262.a „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F i g . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

12P10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-262.a „ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

12P10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-262.a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

12P10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 6 www.unisonic.com.tw QW-R502-262.a „ TYPICAL CHARACTERISTICS 2000 200 Drain Current vs. Source to Drain Voltage Drain Current,ID (mA) Source to Drain Voltage,VSD (mV) 800 1000 400 600 400 600 800 1200 VDS VGS 90% 10% Switching Time Waveforms td(on) tr tf td(off) Drain Current,ID (µA) Drain Current,ID (µA) 150 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (mV) 10050 200 4.5V 10V VGS=2.5V