12NN10

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UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-506.a DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. „ FEATURES * Low Gate Charge (Typically 10nC) * 2.5A, 100V, 150mΩ @ VGS=10V * Fast Switching Speed * Simple Drive Requirement „ SYMBOL SOP-8 „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 4 5 6 7 8 Packing 12NN10L-S08-R 12NN10G-S08-R SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

12NN10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw QW-R502-506.a „ ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 100 V Gate-Source Voltage V GSS ±20 V Continuous(Note 3) I D 2.5 A Drain Current Pulsed(Note 2) I DM 10 A P o w e r D i s s i p a t i o n P D 2 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by Max. junction temperature. 3. Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 135°C /W when mounted on Min. copper pad. „ THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient (Note 1) θJA 62.5 °C/W Note: 1. Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 135°C /W when mounted on Min. copper pad. „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 100 V Drain-Source Leakage Current I DSS V DS=80V, VGS=0V 10 µA Forward V DS=0V ,VGS=20V 100 nA Gate-Source Leakage Current Reverse IGSS VDS=0V ,VGS=-20V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) VDS=VGS, ID=250µA 1 3 V Drain-Source On-State Resistance (Note 1) R DS(ON) V GS=10V, ID=2A 150 m Ω Forward Transconductance g FS V DS=10V, ID=2A 2.8 S DYNAMIC PARAMETERS Input Capacitance C ISS 420 672 pF Output Capacitance C OSS 60 pF Reverse Transfer Capacitance C RSS VDS=25V,VGS=0V,f=1.0MHz 40 pF SWITCHING PARAMETERS Total Gate Charge (Note 1) Q G 10 16 nC Gate-Source Charge Q GS 2 nC Gate-Drain Charge Q GD VDS=80V, VGS=10V, ID=2A 4 nC Turn-ON Delay Time (Note 1) t D(ON) 6.5 ns Turn-ON Rise Time t R 7 ns Turn-OFF Delay Time t D(OFF) 14 ns Turn-OFF Fall Time t F VDS=50V, ID=2A, RG=3.3Ω VGS=10V 3.5 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 1) V SD I S =1.5A, VGS=0V 1.3 V

12NN10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw QW-R502-506.a Body Diode Reverse Recovery Time (Note 1) t RR 40 ns Body Diode Reverse Recovery Charge Q RR VGS=0V, IS=2A, dIF/dt=100A/μs 75 nC Note: 1. Pulse test „ TEST CIRCUITS AND WAVEFORMS

12NN10 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 3 www.unisonic.com.tw QW-R502-506.a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.