12N80G-T3P-T

12N80_15 UTC | Alldatasheet

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• Manufacturer or author: q-janice
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UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-594.G 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N80 is universally applied in high efficiency switch mode power supply. „ FEATURES * RDS(on) < 1.0 Ω @ VGS=10V * High switching speed * Improved dv/dt capability * 100% avalanche tested „ SYMBOL „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 12N80L-T47-T 12N80G-T47-T TO-247 G D S Tube 12N80L-T3P-T 12N80G-T3P-T TO-3P G D S Tube 12N80L-TC3-T 12N80G-TC3-T TO-230 G D S Tube 12N80L-TF2-T 12N80G-TF2-T TO-220F2 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source „ MARKING

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . G „ ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 800 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous (TC=25°C) I D 12 A Pulsed (Note 2) I DM 48 A Avalanche Current (Note 2) I AR 12 A Power Dissipation TO-247 PD 360 W TO-3P 390 W TO-230 167 W TO-220F2 51 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-247 θJA 50 °C/W TO-3P 40 °C/W TO-220F2/TO-230 62.5 °C/W Junction to Case TO-247 θJC 0.35 °C/W TO-3P 0.32 °C/W TO-230 0.75 °C/W TO-220F2 2.43 °C/W

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . G „ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 800 V Breakdown Voltage Temperature Coefficient BV△ DSS/T△ J ID=250µA, Referenced to 25°C 1.0 V/°C Drain-Source Leakage Current I DSS VDS=800V, VGS=0V 10 µAVDS=640V, TC=125°C 100 Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V 100 nA Reverse V GS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=6A 0.75 1.0 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 4200 pF Output Capacitance C OSS 315 pF Reverse Transfer Capacitance C RSS 90 pF SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDS=640V, ID=12A (Note 1, 2) 123 155 nC Gate to Source Charge Q GS 27 45 nC Gate to Drain Charge Q GD 49 80 nC Turn-ON Delay Time t D(ON) VDD=400V, ID=12A, RG=25Ω (Note 1, 2) 100 120 ns Rise Time t R 198 220 ns Turn-OFF Delay Time t D(OFF) 340 360 ns Fall-Time t F 180 200 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 12 A Maximum Body-Diode Pulsed Current I SM 48 A Drain-Source Diode Forward Voltage V SD I S=12A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t rr VGS=0V, IS=12A, dIF/dt=100A/µs (Note 1) 1000 ns Body Diode Reverse Recovery Charge Q RR 17.0 µC Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . G „ TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG VGS VGS 200nF Same Type as DUT 3mA Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 10V tP RG DUT L VDS ID VDD tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . G „ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . G „ TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) 0.70 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 100 150 200 250 300 0 200 600 800 1000400 100 150 200 250 300 Drain Current, ID (A) Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.