12N80

12N80 UTC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-594.b 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N80 is universally applied in high efficiency switch mode power supply. „ FEATURES * RDS(on) = 0.9Ω @VGS = 10 V * High switching speed * Improved dv/dt capability * 100% avalanche tested „ SYMBOL TO-220 TO-220F1 „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 12N80L-TA3-T 12N80G-TA3-T TO-220 G D S Tube 12N80L-TF1-T 12N80G-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

12N80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . b „ ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 800 V Gate-Source Voltage V GSS ±30 V Continuous (TC=25°C) I D 12 A Drain Current Pulsed (Note 2) I DM 48 A Avalanche Current (Note 2) I AR 12 A TO-220 225 W Power Dissipation TO-220F1 PD 51 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width lim ited by maximum junction temperature „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W TO-220 0.56 °C/W Junction to Case TO-220F1 θJC 2.43 °C/W

12N80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . b „ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 800 V Breakdown Voltage Temperature Coefficient BV△ DSS/T△ J ID=250µA, Referenced to 25°C 1.0 V/°C VDS=800V, VGS=0V 10Drain-Source Leakage Current I DSS VDS=640V, TC=125°C 100 µA Forward V GS=+30V, VDS=0V 100 nAGate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=6A 0.75 0.9 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 4200 pF Output Capacitance C OSS 315 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 90 pF SWITCHING PARAMETERS Total Gate Charge Q G 123 155 nC Gate to Source Charge Q GS 27 45 nC Gate to Drain Charge Q GD VGS=10V, VDS=640V, ID=12A (Note 1, 2) 49 80 nC Turn-ON Delay Time t D(ON) 18 50 ns Rise Time t R 12 50 ns Turn-OFF Delay Time t D(OFF) 51 100 ns Fall-Time t F VDD=400V, ID=12A, RG=25Ω (Note 1, 2) 18 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 12 A Maximum Body-Diode Pulsed Current I SM 48 A Drain-Source Diode Forward Voltage V SD I S=12A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t rr 1000 ns Body Diode Reverse Recovery Charge Q RR VGS=0V, IS=12A, dIF/dt=100A/µs (Note 1) 17.0 µC Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

12N80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . b „ TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG VGS VGS 200nF Same Type as DUT 3mA Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 10V tP RG DUT L VDS ID VDD tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

12N80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . b „ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

12N80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 9 4 . b UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.