12N80 SY | Alldatasheet

Document overview

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Technical content

Features

l RDSON=0.64Ω @Vgs=10V, Id=6A l Low gate Charge(typical 58.2nC) l Low Crss (typical 6.5pF) l Fast switching capability l 100% avalanche tested l Improved dv/dt capability l Halogen free and RoHS compliant

Applications

l Switch Mode Power Supply l Uninterruptible Power Supply (UPS) l TV Power l A dapter/Charger Key Performance Parameters Parameter Value Unit VDS @ TJ,max 800 V RDS(on),typ 0.64 Ω Qg,typ 58 nC ID 12 A ID,pulse 48 A Device Marking and Package Information Device Package Marking 12N80 TO-220F 12N80 800V N-Channel Planar MOSFET TO-220F Drain Source Gate

Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage(VGS=0V) VDS 800 V Continuous Drain Current 1) TC = 25ºC ID A TC = 100ºC 7.6 Pulsed Drain Current 2) ID,pulse 48 A Gate-Source Voltage VGS ±30 V Single Pulse Avalanche Energy 3) EAS 1368 mJ Peak Diode Recovery dv/dt 4) dv/dt 5 V/ns Power Dissipation For TO-220F PD 61 W Power Dissipation For TO-247、TO-3P 235 W Continuous Diode Forward Current IS 12 A Diode Pulsed Current 2) IS,pulse 48 Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Notes 1) Limited by maximum junction temperature. 2) Repetitive Rating: Pulse width limited by maximum junction temperature. 3) L=19mH, ID=12A, Start TJ=25℃. 4) ISD ≤12A, di/dt≤100A/μs, VDD≤BVDSS, Start TJ=25℃. Thermal Resistance For TO-220F Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 2.02 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 80 Thermal Resistance For TO-247、TO-3P Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.53 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 62

Electrical Characteristics TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 800 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 800V VGS = 0V, TJ = 25ºC -- -- 1 μA VDS = 800V, VGS = 0V, TJ = 150ºC -- -- 100 Gate-Source Leakage Current IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.5 V Drain-Source On-State-Resistance RDS(on) VGS = 10V, ID = 6A -- 0.64 0.8 Ω Gate Resistance RG f = 1.0MHz open drain -- 2.5 -- Ω Dynamic Characteristics Input Capacitance Ciss VGS = 0V, VDS =25V f = 1.0MHz -- 2986 -- pFOutput Capacitance Coss -- 205 -- Reverse Transfer Capacitance Crss -- 6.5 -- Total Gate Charge Qg VDD = 640V, ID = 12A VGS = 10V -- 58.2 -- nCGate-Source Charge Qgs -- 14.1 -- Gate-Drain Charge Qgd -- 17.7 -- Gate Plateau Voltage VPlateau -- 4.4 -- V Turn-on Delay Time td(on) VDD = 400V, ID = 12A RG = 25Ω -- 50 -- ns Turn-on Rise Time tr -- 44 -- Turn-off Delay Time td(off) -- 80 -- Turn-off Fall Time tf -- 62 -- Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD TJ = 25ºC, ISD = 12A VGS = 0V -- -- 1.2 V Reverse Recovery Time trr VR = 400V IF = 12A, diF/dt = 100A/μs -- 639 -- ns Reverse Recovery Charge Qrr -- 6 -- μC

Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform

SYMBOL Unit: mm MIN MAX A 4.45 4.9 A1 2.3 2.8 A3 2.5 3 b 0.65 0.95 b2 1.12 1.55 c 0.4 0.65 D 15.5 16.24 D1 15.27 16.07 E 9.96 10.36 e 2.54BSC H1 6.48 6.88 L 12.5 13.5 L1 2.6 3.5 ΦP 3.03 3.4 Q 3.1 3.5 12N80