12N70

12N70 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-220.A

12 Amps, 700 Volts

„ DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resi stance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. „ FEATURES * RDS(ON) = 0.7Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( C RSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number:12N70L „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 12N70-TA3-T 12N70L-TA3-T TO-220 G D S Tube 12N70-TF3-T 12N70L-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 2 0 . A „ ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 1) I AR 12 A Continuous Drain Current I D 12 A Pulsed Drain Current (Note 1) I DM 48 A Single Pulsed (Note 2) E AS 790 mJ Avalanche Energy Repetitive (Note 1) E AR 24 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Junction Temperature T J +150 ℃ Operating Temperature T OPR -55 ~ +150 ℃ Storage Temperature T STG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 μA 700 V Drain-Source Leakage Current I DSS V DS = 600 V, VGS = 0 V 10 μA Gate-Source Leakage Current I GSS V GS = ±30 V, VDS = 0 V ±100 nA Breakdown Voltage Temperature Coefficient BV△ DSS/△TJ ID = 250 μA, Referenced to 25°C 0.7 V/ ℃ ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID = 6.0A 0.55 0.7 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 1480 1900 pF Output Capacitance C OSS 200 270 pF Reverse Transfer Capacitance C RSS VDS = 25 V, VGS = 0 V, f = 1MHz 25 35 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 30 70 ns Turn-On Rise Time t R 115 240 ns Turn-Off Delay Time t D(OFF) 95 200 ns Turn-Off Fall Time t F VDD = 300V, ID = 12A, RG = 25Ω (Note 4, 5) 85 180 ns Total Gate Charge Q G 42 54 nC Gate-Source Charge Q GS 8.6 nC Gate-Drain Charge Q GD VDS= 480V,ID= 12A, VGS= 10 V (Note 4, 5) 21 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS = 12A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 12 A Maximum Pulsed Drain-Source Diode Forward Current ISM 48 A Reverse Recovery Time t RR 380 ns Reverse Recovery Charge Q RR VGS = 0 V, IS = 12A, dIF/dt = 100 A/μs (Note 4) 3.5 μC Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 10mH, I AS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3 . I SD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 5. Essentially indep endent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 2 0 . A „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F i g . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 2 0 . A „ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 2 0 . A „ TYPICAL CHARACTERISTICS Notes: 1.VDS=50V 2.250μs Pulse Test 55℃ 25℃ 150℃ 101 100 10-1 24 68 1 0 Gate-Source Voltage, VGS (V) Transfer Characteristics Notes: 250μs Pulse Test TC=25℃ Top: VGS 15V 10V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 100 10-1 100 101 Drain-Source Voltage, VGS (V) On-Resign Characteristics

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 2 2 0 . A „ TYPICAL CHARACTERISTICS Drain Current, ID (A) On-Resistance, RDS(ON) (mΩ) D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 100 10-1 10-2 Thermal Response, ZθJC(t) 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve Notes: 1.θJC(t)=2.27℃/W Max. 2.Duty Factor,D=t1/t2 3.TJM-TC=PDM*θJC(t) PDM t T UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.