12N65L-TF1-T

12N65 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-583.B 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-st ate resistance, provide superior switching performance and withst and high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored. „ FEATURES * RDS(ON) = 0.85Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( C RSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain TO-2201

1 TO-220F

1 TO-220F1

„ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 12N65L-TA3-T 12N65G-TA3-T TO-220 G D S Tube 12N65L-TF1-T 12N65G-TF1-T TO-220F1 G D S Tube 12N65L-TF3-T 12N65G-TF3-T TO-220F G D S Tube 12N65L-T2Q-T 12N65G-T2Q-T TO-262 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 8 3 . B „ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 12 A Drain Current Continuous I D 12 A Pulsed (Note 2) I DM 48 A Avalanche Energy Single Pulsed (Note 3) E AS 790 mJ Repetitive (Note 2) E AR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220 / TO-262 PD 225 W TO-220F / TO-220F1 51 W Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width lim ited by maximum junction temperature 3. L = 10mH, I AS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. I SD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C „ THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 / TO-262 θJC 0.56 °C/W TO-220F/TO-220F1 2.43 °C/W

UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 8 3 . B „ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 µA 650 V Drain-Source Leakage Current I DSS V DS = 650 V, VGS = 0 V 1 µA Gate-Source Leakage Current I GSS V GS = ±30 V, VDS = 0 V ±100 nA Breakdown Voltage Temperature Coefficient BV△ DSS/△TJ ID=250µA,Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID = 6.0A 0.65 0.85 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VDS = 25 V, VGS = 0 V, f = 1MHz 1480 1900 pF Output Capacitance C OSS 200 270 pF Reverse Transfer Capacitance C RSS 25 35 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) VDD = 325V, ID = 12A, RG = 25Ω (Note 1, 2) 30 70 ns Turn-On Rise Time t R 115 240 ns Turn-Off Delay Time t D(OFF) 95 200 ns Turn-Off Fall Time t F 85 180 ns Total Gate Charge Q G VDS= 520V,ID= 12A, VGS= 10 V (Note 1, 2) 42 54 nC Gate-Source Charge Q GS 8.6 nC Gate-Drain Charge Q GD 21 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS = 12A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 12 A Maximum Pulsed Drain-Source Diode Forward Current ISM 48 A Reverse Recovery Time t RR V GS = 0 V, IS = 12A, dIF/dt = 100 A/µs (Note 1) 380 ns Reverse Recovery Charge Q RR 3.5 µC Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 8 3 . B „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 8 3 . B „ TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms G a t e C h a r g e T e s t C i r c u i t G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 8 3 . B „ TYPICAL CHARACTERISTICS -55°C 25°C 101 100 10-1 24 68 1 0 Gate-Source Voltage, VGS (V) Transfer Characteristics Notes: 250µs Pulse Test T C=25°C Top: VGS 15V 10V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 100 10-1 100 101 Drain-Source Voltage, VGS (V) On-Resign Characteristics 150°C Notes: 1.VDS=50V 2.250µs Pulse Test

UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 8 3 . B „ TYPICAL CHARACTERISTICS Drain Current, ID (A) Thermal Response, ZθJC(t) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.