12N65KL-TF2-T

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UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Preliminary Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-B07.F 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.  FEATURES * RDS(ON) < 0.75 Ω @ VGS = 10 V, ID = 6 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL  ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 12N65KL-TF1-T 12N65KG-TF1-T TO-220F1 G D S Tube 12N65KL-TF2-T 12N65KG-TF2-T TO-220F2 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2 (3) L: Lead Free, G: Halogen Free and Lead Free 12N65KL-TF1-T (1)Packing Type (2)Package Type (3)Green Package  MARKING

12N65K-MT Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Q W - R 5 0 2 - B 0 7 . F  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage V GSS ±30 V Continuous I D 12 A Drain Current Pulsed (Note 2) I DM 48 A Avalanche Energy Single Pulsed (Note 3) E AS 400 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation P D 51 W Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 5.55mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.43 °C/W  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 µA 650 V Drain-Source Leakage Current I DSS V DS = 650 V, VGS = 0 V 1 µA Gate-Source Leakage Current I GSS V GS = ±30 V, VDS = 0 V ±100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA,Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, ID = 6.0A 0.60 0.75 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 1600 1900 pF Output Capacitance C OSS 175 210 pF Reverse Transfer Capacitance C RSS VDS = 25 V, VGS = 0 V, f = 1MHz 10 22 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 100 110 ns Turn-On Rise Time t R 125 138 ns Turn-Off Delay Time t D(OFF) 180 230 ns Turn-Off Fall Time t F VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) 104 140 ns Total Gate Charge Q G 39 54 nC Gate-Source Charge Q GS 10 nC Gate-Drain Charge Q GD VDS= 50V,ID= 1.3A, VGS= 10 V (Note 1, 2) 9 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS = 12A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 12 A Maximum Pulsed Drain-Source Diode Forward Current ISM 48 A Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

12N65K-MT Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Q W - R 5 0 2 - B 0 7 . F  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

12N65K-MT Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw Q W - R 5 0 2 - B 0 7 . F  TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms G a t e C h a r g e T e s t C i r c u i t G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

12N65K-MT Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw Q W - R 5 0 2 - B 0 7 . F UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.