HRH12N65ANX SHUNYE | Alldatasheet

Document overview

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Technical content

Features

RDSON≤0.8Ω@Vgs=10V, Id=6A ⚫ Ultra Low gate Charge(typical 42nC) ⚫ Low Crss (typical 4.6pF) ⚫ Fast switching capability ⚫ 100% avalanche tested ⚫ Improved dv/dt capability

Applications

 Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) (PFC)  Charger Key Performance Parameters Parameter Value Unit VDS @ TJ,max 700 V RDS(on),max 0.8 Ω Qg,typ 42.2 nC ID 12 A ID,pulse 48 A Device Marking and Package Information Device Package Marking 12N65ANF TO-220F 12N65ANF 12N65ANP TO-220 12N65ANP 650V N-Channel Planar MOSFET Drain Source Gate TO-220F TO-220

Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage(VGS=0V) VDS 650 V Continuous Drain Current1) TC = 25ºC ID A TC = 100ºC 7.8 Pulsed Drain Current2) ID,pulse 48 A Gate-Source Voltage VGS ±30 V Single Pulse Avalanche Energy3) EAS 551 mJ MOSFET dv/dt Ruggedness, VDS = 0...480V dv/dt 5 V/ns Power Dissipation For TO-220F PD 108 W Power Dissipation For TO-220/3P/247 139 Continuous Diode Forward Current IS 12 A Diode Pulsed Current2) IS,pulse 48 Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Notes 1) Limited by maximum junction temperature. 2) Repetitive Rating: Pulse width limited by maximum junction temperature. 3）L=10mH, ID=10.5A, Start TJ=25℃ Thermal Resistance For TO-220F Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 1.16 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 80 Thermal Resistance For TO-220/3P/247 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.9 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 62

Electrical Characteristics TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µ A 700 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V VGS = 0V, TJ = 25ºC -- -- 1 μA VDS = 650V, VGS = 0V, TJ = 150ºC -- -- 100 Gate-Source Leakage Current IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µ A 2 -- 4 V Drain-Source On-State-Resistance RDS(on) VGS = 10V, ID = 6A -- 0.64 0.8 Ω Gate Resistance RG f = 1.0MHz open drain -- 2 -- Ω Dynamic Characteristics Input Capacitance Ciss VGS = 0V, VDS = 25V f = 1.0MHz -- 2133 -- pFOutput Capacitance Coss -- 152 -- Reverse Transfer Capacitance Crss -- 4.6 -- Total Gate Charge Qg VDD = 520V, ID = 10A VGS = 10V -- 42 -- nCGate-Source Charge Qgs -- 11 -- Gate-Drain Charge Qgd -- 13 -- Gate Plateau Voltage VPlateau -- 4.7 -- V Turn-on Delay Time td(on) VDD = 325V, ID = 12A RG = 25Ω, VGS = 10V -- 31 -- ns Turn-on Rise Time tr -- 27 -- Turn-off Delay Time td(off) -- 61 -- Turn-off Fall Time tf -- 47 -- Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD TJ = 25ºC, ISD = 12A VGS = 0V -- -- 1.2 V Reverse Recovery Time trr VR = 400V IF = 12A, diF/dt = 100A/μs -- 870 -- ns Reverse Recovery Charge Qrr -- 9.6 -- μC

Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform

Unit:mm Symbol Min. Nom Max. A 4.50 4.70 4.83 A1 2.34 2.54 2.74 A2 0.70 REF A3 2.56 2.76 2.93 b 0.70 --- 0.90 b1 1.18 --- 1.38 b2 --- --- 1.47 c 0.45 0.50 0.60 D 15.67 15.87 16.07 D1 15.55 15.75 15.95 Unit:mm Symbol Min. Nom Max. D2 9.60 9.80 10.0 E 9.96 10.16 10.36 e 2.54 BSC H1 6.48 6.68 6.88 L 12.68 12.98 13.28 L1 --- --- 3.50 L2 6.50 REF ΦP 3.08 3.18 3.28 Q 3.20 --- 3.40 θ1 1° 3° 5°

Unit:mm Symbol Min. Nom Max. A 4.40 4.50 4.60 A1 1.27 1.30 1.33 A2 2.30 2.40 2.50 b 0.70 --- 0.90 b2 1.27 --- 1.40 c 0.45 0.50 0.60 D 15.30 15.70 16.10 D1 9.10 9.20 9.30 D2 13.10 --- 13.70 E 9.70 9.90 10.20 Unit:mm Symbol Min. Nom Max. E1 7.80 8.00 8.20 e 2.54 BSC e1 5.08 BSC H1 6.30 6.50 6.70 L 12.78 13.08 13.38 L1 --- --- 3.50 L2 4.60 REF ΦP 3.55 3.60 3.65 Q 2.73 --- 2.87 θ1 1° 3° 5°