12N60C3D

HGTG12N60C3D FAIRCHILD | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Features

• 24A, 600V at T C = 25 o C J = 150 o C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247

Ordering Information

HGTG12N60C3D TO-247 G12N60C3D NOTE: When ordering, use the entire part number. C G E C E G Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 Data Sheet December 2001

©2001 Fairchild Semiconductor Corporation HGTG12N60C3D Rev. B Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified HGTG12N60C3D UNITS CES 600 V Collector Current Continuous At T C = 25 o C25 24 A At T C = 110 o C110 12 A Average Diode Forward Current at 110 o (AVG) 15 A CM 96 A GES 20 V GEM 30 V Switching Safe Operating Area at T J = 150 o Power Dissipation Total at T C = 25 o D 104 W Power Dissipation Derating T C > 25 o o C J , T STG -40 to 150 o C L 260 o C Short Circuit Withstand Time (Note 2) at V GE SC µ s Short Circuit Withstand Time (Note 2) at V GE SC µ s CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. V CE(PK) = 360V, T J = 125 o C, R G = 25 Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV CES I C = 250 µ A, V GE = 0V 600 - - V Emitter to Collector Breakdown Voltage BV ECS I C = 10mA, V GE = 0V 15 25 - V Collector to Emitter Leakage Current I CES V CE = BV CES T C = 25 o C - - 250 µ A V CE = BV CES T C = 150 o C - - 2.0 mA Collector to Emitter Saturation Voltage V CE(SAT) I C = I C110 V GE = 15V T C = 25 o C - 1.65 2.0 V T C = 150 o C - 1.85 2.2 V I C = 15A, V GE = 15V T C = 25 o C - 1.80 2.2 V T C = 150 o C - 2.0 2.4 V Gate to Emitter Threshold Voltage V GE(TH) I C = 250 µ V CE = V GE T C = 25 o C 3.0 5.0 6.0 V Gate to Emitter Leakage Current I GES V GE 20V - - 100 nA Switching SOA SSOA T J = 150 o V GE = 15V, R G = 25 L = 100 µ H V CE(PK) = 480V 80 - - A V CE(PK) = 600V 24 - - A Gate to Emitter Plateau Voltage V GEP I C = I C110 , V CE = 0.5 BV CES - 7.6 - V On-State Gate Charge Q G(ON) I C = I C110 V CE = 0.5 BV CES V GE = 15V - 48 55 nC V GE = 20V - 62 71 nC Current Turn-On Delay Time t d(ON)I T J = 150 o I CE = I C110, V CE(PK) = 0.8 BV CES, V GE = 15V, R G = 25 L = 100 µ H -1 4-n s Current Rise Time t rI -1 6-n s Current Turn-Off Delay Time t d(OFF)I - 270 400 ns Current Fall Time t fI - 210 275 ns Turn-On Energy E ON - 380 - µ J Turn-Off Energy (Note 3) E OFF - 900 - µ J Diode Forward Voltage V EC I EC = 12A - 1.7 2.0 V HGTG12N60C3D

FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO FIGURE 14. SWITCHING SAFE OPERATING AREA FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER FIGURE 16. GATE CHARGE WAVEFORMS

100 TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH

©2001 Fairchild Semiconductor Corporation HGTG12N60C3D Rev. B Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means, for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of V GEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open- circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener Diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows f MAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f MAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. t D(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. f MAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed P D. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for E OFF; i.e. the collector current equals zero (ICE = 0). HGTG12N60C3D

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ Rev. H4 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET STAR*POWER is used under license VCX™