12N50C3

SPW12N50C3 INFINEON | Alldatasheet

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Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A Feature

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance P-TO247 Type Package Ordering Code SPW12N50C3 P-TO247 Q67040-S4580 Marking 12N50C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 11.6 A Pulsed drain current, tp limited by Tjma x ID puls 34.8 Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V EAS 340 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 11.6 A, VDD = 50 V EAR 0.6 Avalanche current, repetitive tAR limited by Tjma x IAR 11.6 A Reverse diode dv/dt IS=11.6A, VDS=480V, Tj=125°C dv/dt 6 V/ns Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C

Parameter Symbol Value Unit Drain Source voltage slope V DS = 400 V, ID = 11.6 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 500 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=11.6A - 600 - Gate threshold voltage VGS(th) ID=500µΑ , V GS =VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =500V, VGS =0V, Tj=25°C, Tj=150°C 0.1 100 µA Gate-source leakage current IGSS V GS =20V, VDS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=7A, Tj=25°C Tj=150°C 0.34 0.92 0.38 Ω Gate input resistance R G f=1MHz, open Drain - 1.4 -

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=7A - 8 - S Input capacitance C iss V GS =0V, V DS =25V, f=1MHz - 1200 - pF Output capacitance C oss - 400 - Reverse transfer capacitanceC rss - 30 - Effective output capacitance,3) energy related Co(er) V GS =0V, V DS =0V to 400V - 45 - pF Effective output capacitance,4) time related Co(tr) - 92 - Turn-on delay time td(on) V DD =380V, V GS =0/10V, ID=11.6A, R G =6.8Ω - 10 - ns Rise time tr - 8 - Turn-off delay time td(off) - 45 - Fall time tf - 8 - Gate Charge Characteristics Gate to source charge Q gs V DD =400V, ID=11.6A - 5 - nC Gate to drain charge Q gd - 26 - Gate charge total Qg V DD =400V, ID=11.6A, V GS =0 to 10V - 49 - Gate plateau voltage V(plateau) V DD =400V, ID=11.6A - 5 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 11.6 A Inverse diode direct current, pulsed ISM - - 34.8 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=400V, IF=IS , diF/dt=100A/µs - 380 - ns Reverse recovery charge Q rr - 5.5 - µC Peak reverse recovery currentIrrm - 38 - A Peak rate of fall of reverse recovery current dirr/dt - 1100 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.015 K/W Rth2 0.03 Rth3 0.056 Rth4 0.197 Rth5 0.216 Rth6 0.083 Thermal capacitance Cth1 0.0001878 Ws/K Cth2 0.0007106 Cth3 0.000988 Cth4 0.002791 Cth5 0.007285 Cth6 0.063 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 110 120 W 140 SPW12N50C3 Ptot

2 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

3 Safe operating area FullPAK

ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

4 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

5 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 6.5V 20V 10V 7 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 7.5V 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, V GS 0 2 4 6 8 10 12 14 16 A 20 ID 0.4 0.6 0.8 1.2 1.4 1.6 Ω RDS(on) 4V 4.5V 5V 5.5V 6V 6.5V 20V

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ω 2.1 SPW12N50C3 RDS(on) typ 98% 10 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 8 V 10 VGS A ID 25°C 150°C 11 Typ. gate charge VGS = f (QGate) parameter: ID = 11.6 A pulsed 0 10 20 30 40 50 nC 70 QGate V SPW12N50C3 VGS 0.2 VDS max

0.8 VDS max

12 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPW12N50C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

13 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C

14 Avalanche energy

EAS = f (Tj) par.: ID = 5.5 A, V DD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 mJ 350 EAS

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 450 460 470 480 490 500 510 520 530 540 550 560 570 V 600 SPW12N50C3 V(BR)DSS

16 Avalanche power losses

PAR = f (f ) parameter: E AR =0.6mJ 10 4 10 5 10 6 Hz f 100 150 200 W 300 PAR

17 Typ. capacitances C = f (VDS ) parameter: V GS =0V, f=1 MHz 0 100 200 300 V 500 VDS -1 10 0 10 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss 18 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 V 500 VDS µJ Eoss Definition of diodes switching characteristics

6.35 15.9 6.17 9.91 20.9 4.37 5.94 ø3.61 2.97 x 0.127 1.2 2.92 5.46 2.03 5.03 0.762 MAX. 2.4+0.05 41.22 20˚ D 7 D 1.75 1.14 0.243 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12

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