12N10P CHONGQING | Alldatasheet

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12 Amps,100 Volts N-CHANNEL Power MOSFET

 12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA  Networking DC-DC Power System  LCD/LED back light SOP8L PIN CONFIGURATION GENERAL DESCRIPTION The 12N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The 12N10Pmeet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol 12N10P UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 12 A Pulsed Drain Current(Note1) IDM 48 Single Pulse Avalanche Energy (Note 2) EAS 36 mJ Avalanche Current IAS 12 A Reverse Diode dV/dt (Note 3) dv/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 ℃ Channel Temperature TCH 150 ℃ Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds TL 260 ℃ Thermal Characteristics Parameter Symbol MAX Units Thermal resistance , Channel to Case Rth(ch-c) 18 ℃/W Thermal resistance , Channel to Ambient Rth(ch-a) 72 ℃/W Maximum Power Dissipation TC=25℃ PD 3.6 W

Electrical Characteristics(Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 100 － － V Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Reference to 25℃， ID=250uA － 0.06 － V/℃ Zero Gate Voltage Drain Current IDSS VDS=100VGS=0V － － 1 μA IDSS VDS=100VGS=0V（TJ =55℃） － － 5 μA Gate-Body Leakage Current,Forward IGSS VGS=±20VDS=0V － － ±100 nA On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=10V,ID=250uA 1.0 － 3.0 V Drain-Source On-State Resistance RDS(on) VGS=10V,ID=10A － 32 36 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=50V,VGS=0V, f=1.0MHZ － 2020 － pF Output Capacitance Coss － 450 － pF Reverse Transfer Capacitance Crss － 260 － pF Switching Characteristics Turn-On Delay Time td(on) V DD =50V,I D =1A, R G =6.8Ω,V GS =10V R L =25Ω, (Note4,5) － 25 － ns Turn-On Rise Time tr － 18.5 － ns Turn-Off Delay Time td(off) － 58 － ns Turn-Off Fall Time tf － 75 － ns Total Gate Charge Qg VDS=50V,ID=6A, VGS=10V, (Note4,5) － 50 － nC Gate-Source Charge Qgs － 13 － nC Gate-Drain Charge Qgd － 11 － nC Drain-Source Body Diode Charcteristics and Maximum Ratings Continuous Diode Forward Current IS VG = VD= 0V, Force Current － － 12 A Pulsed Diode Forward Current ISM － － 48 A Diode Forward Voltage VSD IS=12A,VGS=0V － － 1.3 V Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=25V,L=0.5mH,Rg=25Ω,IAS=12A , starling TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃，Pulse width≤300us;duty cycle≤2%. 4. Repetitive rating; pulse width limited by maximum junction temperature.

RATINGAND CHARACTERISTIC CURVES

RATINGAND CHARACTERISTIC CURVES 0.2 0.1 VDS,Source-Drain Voltage(V) ISD , Reverse Drain Current(A) 100 TJ =150℃ TJ =25℃ VGS =0V Ciss F= 1MHz Qg ,Total Gate Charge(nC) VGS,Gate-to-Source Voltage(V) 10000 Capacitance(pF) VDS,Drain-to-Source Voltage(V) 1000 100 ID,Drain-to-Source Current(A) VDS,Drain-to-Source Voltage(V) -60 110 100 -40 500 125 15075 130 120 TJ , Junction Temperature(℃) VDS , Drain-to-Source Brakdown Voltage(V) 140 -20 25 100 175 VGS=10V 17510025-25 RDS(on),Drain-to-Source On Resistance (Normalized) TJ , Junction Temperature(℃) 2.5 75 1501250 50-50 1.5 0.5 -75 4 8 12 16 20 VGS=10V,9V,8V,7V,6V 10 20 30 50 6040 ID =12A 8 16 24 32 40 48 Coss Crss

VDS=10V ID=250uA Pulse Test ID, Drain Current(A) VDS,Drain-to-Source Voltage(V) 100 10 1001 0.1 0.01 0.1 Operation in this Area Limited by RDS(on) IDM =Limited Limited by RDS(on) BVDSS Limited TC=25℃ TJ=150℃ Single Pulse 0.1 1 10010 100 ID, Drain Current(V) RDS(ON) , Rrain-Source On-Resistance (Ω) -80 8040 TC, Case Temperature(℃) VTH , Gate Threshold Voltage(V) EAS , Avalanche Energy(mJ) TCH , Channel Temperature(Initial) (℃) 125 15075 10050 0.0001 Pulse Time(s) Nomalized Effective Transient Thermal Impedance -40 0 120 Common Source Tc=25℃ Pulse Test VGS =10V 0.01 0.1 0.001 0.01 1010.1 Duty Cycle = 0.5 0.02 0.05 0.1 0.2 Single Pulse 140 1ms 10ms DC

PACKAGE OUTLINE DIMENSIONS SOP8L Dimensions in inches and (millimeters) SOP8L Dim Min Max C —— .050(1.27)