12KPA LUGUANG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

http://www.lgesemi.com Revision:20210428-P1 m a i l : l g e @ l g e s e m i . c o m 12KPA Series R e v e r s e V o l t a g e : 2 0 - 3 6 V A x i a l L e a d P e a k P u l s e P o w e r : 1 2 0 0 0 W T r a n s i e n t V o l t a g e S u p p r e s s o rs F e a t u r e s R - 6

  • Glass passivated chip
  • 12000W peak pulse power capability with a 10/1000μs waveform,repetitive rate (duty Cycle):0.01%
  • Low leakage
  • Uni and Bidirectional unit
  • Excellent clamping capability
  • Very fast respone time
  • Rohs compliant

Applications

  • Use in sensitive electronics protection against Voltage transients induced by inductive load Switching and lighting,especially for automotive load dump application Mechanical Data ◇ Moisture Sensitivity: MSL Level 1,per J-STD-020 ◇ Terminals: Tin lead-free plated . Solderable per MIL-STD-202 Method 208 ◇ Case Material：Molded Plastic; Molding compound meet UL Flammability ClassificationRating 94V-0 ◇ Polarity:Color band denotes cathode end Except Bipolar. ◇ Case: R-6 Molded plastic. Maximum Rating(TA=25℃,unless otherwise noted) Ratings at 25℃ ambient tepmerature unle ss otherwise specified. Parameter Symbol Value Units Peak power dissipation with a 10/1000μs waveform(1) P PPM 12000 W Peak Pluse current with a 10/1000μs waveform(1) I PP See Next Table A Power dissipation on infinite heatsink at TL=75℃ P D 8 .0 W Maximum average forward rectified current IF(AV) 2 0 A Peak forward surge current, 8.3ms half-sine-wave unidirectional only(2) IFSM 500 A Storage temperature range TJ,TSTG -55~150 ℃ Note: (1) Non-repetitive current pluse, per fig.3 and derated above TA=25℃ p e r f i g . 2 ; (2) Measured on 8.3ms single half sine-wave ,or equivalent square wave,duty cycle=4 pluse per minute maximum. (3)Mounted on 5.0mm×5.0mm(0.3mm thick)Copper Pads to each terminal. (4)VF<3.5V for VBR<200V and VF<6.5V for VBR>201V. Dimensions in inches and (millimeters) Bi-directional Uni-directional Cathode Anode

http://www.lgesemi.com Revision:20210428-P2 m a i l : l g e @ l g e s e m i . c o m 12KPA Series Electrical Characteristics(TA==25℃ unless otherwise noted) Part Number （Uni） Part Number （Bi） Breakdown Voltage VBR@IT Maximum Reverse Leakage IR @VRWM(μA) Working Peak Rever voltage VRWM(V) Maximun Reverse Surge Current IPP(A) Maximum Clamping Voltage VC@IPP(V) Min(v) Max(V) IT(mA) Note: 1.For Bi‐dirrectional devices having VR of 30 volts and under,the IR limit is double. I-V Curve Characteristics Soldering Parameters Reflow Condition Lead free assembly Pre Heat Temperature MinTs (min) 150 ℃ Temperature MaxTs (max) 200℃ Time(min to max)(ts) 60-80 secs Average ramp up rate(Liquidus Temp(TA) to peak Ts(max) to TA-ramp-up Rate 3℃/second max Reflow Temperature(TA)(Liquidus) 217 ℃ Time(min to max)(ts) 60-150 seconds Peak Temperature(Tp) 260+0/-5℃ Time within 5℃ of actual peak Temperature(tp) 20-40 seconds Ramp-down Rate 6℃/seconds max Time 25℃ to peak Temperature(Tp) 8 minutes Max. Do not exceed 260℃ Part Number Component package quanty Packaging Option 12KPXXXA R‐6 200PCS Box Vc VBR VR IR IT Ipp V Uni-directional VF Vc VBR VR IR IT Ipp V VcVBRVR Ipp IR IT Bi-directional PPPM Peak Pulse Power Dissipation -- Max power dissipation VR Stand-off Voltage -- Maximum voltage that can be applied to the TVS without operation VBR Breakdown Voltage -- Maximum voltage that flows though the TVS at a specified test current (IT) VC Clamping Voltage -- Peak voltage measured across the TVS at a specified Ippm (peak impulse current) IR Reverse Leakage Current -- Current measured at VR VF Forward Voltage Drop for Uni-directional Temperature (T) Time (t) Ts(min) Ts(max) TL TP ts Preheat tL tp Ramp-up Critical Zone TL to TP Ramp-down t 25˚C to Peak 25˚C Flow/Wave Soldering (Solder Dipping) Peak T emperature : 265OC Dipping Time : 10 seconds Soldering : 1 time

http://www.lgesemi.com Revision:20210428-P3 m a i l : l g e @ l g e s e m i . c o m 12KPA Series Rating and Characteristics Curves(TA=25℃ unless otherwise noted) 试验脉冲5a SYSTEM TEST LEVEL Us(V) Td（ms） Ri（Ω） NUMBER OF PULSE 12V Ⅳ 87 400 0.5 10 pulse 24V Ⅳ 174 350 2 10 pulse