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Document Number: 93487 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 29-Sep-08 1 Standard Recovery Diodes (Stud Version), 12 A 12F(R) Series Vishay High Power Products

FEATURES

  • High surge current capability  Stud cathode and stud anode version  Wide current range  Types up to 1200 V V RRM  RoHS compliant  Designed and qualified for industrial and consumer level TYPICAL APPLICATIONS  Battery charges  Converters  Power supplies  Machine tool controls ELECTRICAL SPECIFICATIONS Note (1) Avalanche version only available from VRRM 400 V to 1200 V PRODUCT SUMMARY IF(AV) 12 A DO-203AA (DO-4) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IF(AV) 12 A TC 144 °C IF(RMS) 19 A IFSM

50 Hz 265

A

60 Hz 280

50 Hz 351

60 Hz 320

TJ - 65 to 175 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V VR(BR), MINIMUM AVALANCHE VOLTAGE V (1) IRRM MAXIMUM AT TJ = 175 °C mA 12F(R) 10 100 150 - 20 200 275 - 40 400 500 500 60 600 725 750 80 800 950 950 100 1000 1200 1150 120 1200 1400 1350

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93487

2 Revision: 29-Sep-08

12F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 12 A Note (1) Available only for avalanche version, all other parameters the same as 12F FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave 12 A 144 °C Maximum RMS forward current I F(RMS) 19 A Maximum on-repetitive peak reverse power PR(1) 10 µs square pulse, TJ = TJ maximum 7 K/W Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 265 A t = 8.3 ms 280 t = 10 ms 100 % VRRM reapplied 225 t = 8.3 ms 235 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 351 A2s t = 8.3 ms 320 t = 10 ms 100 % VRRM reapplied 250 t = 8.3 ms 226 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 3510 A 2√s Low level value of threshold voltage V F(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.77 V High level value of threshold voltage V F(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.97 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 10.70 mΩ High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 6.20 Maximum forward voltage drop V FM Ipk = 38 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.26 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range TJ - 65 to 175 Maximum storage temperature range T Stg - 65 to 200 Maximum thermal resistance, junction to case RthJC DC operation 2 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.5 Allowable mounting torque Not lubricated threads 1.5 + 0 - 10 % N · m 13 lbf · in Lubricated threads 1.2 + 0 - 10 % N · m 10 lbf · in Approximate weight 0.25 oz. Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)

Document Number: 93487 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 29-Sep-08 3 12F(R) Series Standard Recovery Diodes (Stud Version), 12 A Vishay High Power Products Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics Fig. 3 - Forward Power Loss Characteristics ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION REC TANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.33 0.26 TJ = TJ maximum K/W 120° 0.41 0.44 90° 0.53 0.58 60° 0.78 0.81 30° 1.28 1.29 140 150 160 170 180 0 2 4 6 8 1 01 21 4 30° 60° 90° 120° 180° Maximum Allowable Case Temperature (°C) Conduction Angle Average Forward Current (A) 12F(R) Series R (DC) = 2.0 K/W thJC 130 140 150 160 170 180 048 1 2 1 6 2 0 DC 30° 60° 90° 120° 180° Maximum Allowable Case Temperature (°C) Conduction Period Average Forward Current (A) 12F(R) Series R (DC) = 2.0 K/W thJC 02 5 5 0 7 5 1 0 0 Maximum Allowable Ambient Temperature (°C) R =8K/W-DeltaR thSA 6K/W 10K/W 12K/W 15K/W 20K/W 30K/W 02468 1 0 1 2 1 4 Average Forward Current (A) RMS Limit Maximum Average Forward Power Loss (W) Conduction Angle 180° 120° 90° 60° 30° 12F(R) Series T = 175°C J

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4 Revision: 29-Sep-08

12F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 12 A Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 02 5 5 0 7 5 1 0 0 Maximum Allowable Ambient Temperature (°C) R =6K/W-DeltaR thSA 8K/W 10K/W 12K/W 15K/W

20 K/W

180° 120° 90° 60° 30° Average Forward Current (A) RMS Limit Maximum Average Forward Power Loss (W) Conduction Period 12F(R) Series T = 175°C J 100 125 150 175 200 225 250 11 0 1 0 0 Peak Half Sine Wave Forward Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) 12F(R) Series Initial T = 175°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any Rated Load Condition And With Rated V Applied Following Surge. RRM 100 125 150 175 200 225 250 275 0.01 0.1 1 Peak Half Sine Wave Forward Current (A) Pulse Train Duration (s) 12F(R) Series Initial T = 175°C No Voltage Reapplied Rated V Reapplied RRM J Versus Pulse Train Duration. Maximum Non Repetitive Surge Current 100 1000 0123456 T = 25°C J Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 12F(R) Series T = 175°C J 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) thJCTransient Thermal Impedance Z (K/W) 12F(R) Series Steady State Value R = 2.0 K/W (DC Operation) thJC

Document Number: 93487 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 29-Sep-08 5 12F(R) Series Standard Recovery Diodes (Stud Version), 12 A Vishay High Power Products ORDERING INFORMATION TABLE - Current rating: Code = I F(AV) - F = Standard device - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) - Voltage code x 10 = V RRM (see Voltage Ratings table) None = Stud base DO-203AA (DO-4) 10-32UNF-2A M = Stud base DO-203AA (DO-4) M5 x 0.8 (not available for avalanche diodes) Device code 513 24

12 F R 120 M

LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95311

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.