12F20HF3 THINKISEMI | Alldatasheet
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※ Fast switchin g for hi g h efficienc y ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y ※ Low reverse leaka g e current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data ※ Case: Full Plastic Isolated Package ITO-220AB ※ E p ox y : UL 94V-0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 2.0 g ram a pp roximatel y MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 12F20HF3 UNIT VRRM 200 400 600 V VRMS 140 280 420 V VDC 200 400 600 V IF(AV) A IFSM A IR μA μA Trr nS CJ pF RθJC °C/W TJ,TSTG °C Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Typical Junction Capacitance (Note 2) 65 Typical Thermal Resistance (Note 3) 3.0 Operating Junction and Storage Temperature Range -55 to +175 Maximum Reverse Recovery Time (Note1) 25-35 PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Tc=100°C (Total Device 2x6.0A=12.0A) 12.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) 125 Maximum Instantaneous Forward Voltage @6.0A (Per Diode/Per Leg) Maximum DC Reverse Current @TJ=25°C At Rated DC Blocking Voltage @TJ=125°C 1.0 5.0 Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "HF3S" Suffix "HF3D" Suffix "HF3T"Suffix "HF3" 12F20HF3 thru 12F60HF3 Pb Free Plating Product 12F20HF3/12F40HF3/12F60HF3 Pb
12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.10T ITO-220AB(TO-220F-3L) Unit:inch(mm) .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) ※ ThinkiSemi latest&matured process FRD/FRED 12F40HF3 12F60HF3
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p 12F20HF3 12F40HF3 12F60HF3 12F20HF3 thru 12F60HF3 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.10T 9.6 7.2 4.8 2.4