12CWQ03FN SMC | Alldatasheet

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Technical content

Technical Data Green Products Data Sheet N0657, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12CWQ03FN 12CWQ03FN SCHOTTKY RECTIFIER Applications:
  • Disk drives
  • Switching power supply
  • Converters
  • Free-Wheeling diodes
  • Reverse battery protection
  • Battery charging Features:
  • Popular DPAK outline
  • Center tap configuration
  • Small foot print, surface mountable
  • Low forward voltage drop
  • High frequency operation
  • Guard ring for enhanced ruggedness and long term reliability
  • Green products in compliance with the ROHS directive
  • This is a Pb − Free Device
  • All SMC parts are traceable to the wafer lot
  • Additional testing can be offered upon request Mechanical Dimensions: In mm DPAK

Technical Data Green Products Data Sheet N0657, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12CWQ03FN Marking Diagram: Where XXXXX is YYWWL 12 = Forward Current (12A) CW = Configuration Q = Device Type 03 = Reverse Voltage (30V) FN = Package type SSG = SSG YY = Year WW = Week L = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping 12CWQ03FN DPAK (Pb-Free) 2500 pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 30 V 6(peg leg) Max. Average Forward* IF(AV) 50% duty cycle @TC = 135°C, rectangular wave form 12(peg device) A Max. Peak One Cycle Non- Repetitive Surge Current (peg leg) I FSM 8.3 ms, half Sine pulse 156 A

Technical Data Green Products Data Sheet N0657, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12CWQ03FN Electrical Characteristics: Characteristics Symbol Condition Max. Units VF1 @ 6A, Pulse, TJ = 25 °C @ 12A, Pulse, TJ = 25 °C 0.47 0.55 V Max. Forward Voltage Drop (per leg) * VF2 @ 6A, Pulse, TJ = 125 °C @ 12A, Pulse, TJ = 125 °C 0.37 0.49 V Max. Reverse Current (per leg) * IR1 @VR = rated VR TJ = 25 °C 3.0 mA IR2 @VR = rated VR TJ = 125 °C 58 mA Max. Junction Capacitance (per leg) CT @VR = 5V, TC = 25 °C fSIG = 1MHz 590 pF Typical Series Inductance (per leg) LS Measured lead to lead 5 mm from package body 5.0 nH Max. Voltage Rate of Change dv/dt - 10,000 V/μs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature TJ - -55 to +150 °C Max. Storage Temperature Tstg - -55 to +150 °C 3(peg leg) Maximum Thermal Resistance Junction to Case (per leg) R θJC DC operation 1.5(peg device) °C/W Approximate Weight wt - 0.39 g Case Style DPAK

Technical Data Green Products Data Sheet N0657, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12CWQ03FN

Technical Data Green Products Data Sheet N0657, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 12CWQ03FN DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..