12A02CH

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

• Large current capacity
• Low collector-to-emitter saturation voltage (resistance) R CE (sat) typ.=285mΩ [IC=1A, IB=50mA]
• Small ON-resistance (Ron) Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO - -15 V Collector-to-Emitter Voltage V CEO - -12 V Emitter-to-Base Voltage V EBO -- 5 V Collector Current I C -- 1 A Collector Current (Pulse) I CP -- 2 A Collector Dissipation P C Mounted on a ceramic board (600mm ×0.8mm) 700 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7015A-003 Product & Package Information
• Package : CPH3
• JEITA, JEDEC : SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection AD LOT No. TL 12A02CH-TL-E 1 : Base 2 : Emitter 3 : Collecto r CPH3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95

No.7482-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB= - -12V, IE=0A - -100 nA Emitter Cutoff Current I EBO VEB= - -4V, IC=0A - -100 nA DC Current Gain h FE VCE= - -2V, IC= - -10mA 300 700 Gain-Bandwidth Product f T VCE= - -2V, IC= - -50mA 450 MHz Output Capacitance Cob V CB= - -10V, f=1MHz 6 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C= - -400mA, IB= - -20mA - -120 - -240 mV Base-to-Emitter Saturation Voltage V BE(sat) I C= - -400mA, IB= - -20mA - -0.9 - -1.2 mV Collector-to-Base Breakdown Voltage V (BR)CBO IC= - -10μA, IE=0A - -15 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC= - -1mA, RBE=∞ - -12 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE= - -10μA, IC=0A - -5 V Turn-On Time t on See specifi ed Test Circuit. 30 ns Storage Time t stg 75 ns Fall Time t f 15 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 12A02CH-TL-E CPH3 3,000pcs./reel Pb Free VR RB VCC= --5VVBE=5V ++50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2= --400mA Collector-to-Emitter V oltage, VCE -- mV IC -- VCE Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V IC -- VBE Collector Current, IC -- mA --1000 --200 --100 --200 --300 --400 --500 --600 --700 --800 --900 --400 --1200 --600 --800 --1000 --200 IT05094 IT05095 --20mA --30mA--15mA --10mA --7mA --5mA --3mA --2mA --1mA --0.5mA IB=0 VCE= --2V --25 Ta=75

No.7482-3/6 Collector Current, IC -- mA fT -- IC Gain-Bandwidth Product, fT -- MHz IT05101Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF IT05100 Collector Current, IC -- mA IT05098 VCE(sat) -- IC 20 40 60 80 100 120 600 500 400 300 200 100 700 800 140 160 Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- mW IT05103 Mounted on a ceramic board(600mm 2✕0.8mm) Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV IT05099Collector Current, IC -- mA VBE(sat) -- IC Base-to-Emitter Saturation V oltage, VBE(sat) -- V --1.0 53 --1000--10027 5 327 5 327--1027 35 --10 23--1.0 1.0 --1.0 35 7 --1023 5 7 23 5 7 2--100 --1000 --10 --1.0 --0.1 --1.0 --100 --1000 --1023 5 7 23 5 7 --100 2 --100035 7 --10 IC / IB=50 Ta=75 25°C --25 IC / IB=20 Ta= --25°C25°C 75°C f=1MHz VCE= --2V 100 1000 f=1MHz --0.1 Base Current, IB -- mA Ron -- IB ON-resistance, Ron -- Ω IT06091 0.1 1.0 32 57 32 57--1.0 --10 OUTIN 1kΩ 1kΩ IB Collector Current, IC -- mA hFE -- IC DC Current Gain, hFE Collector Current, IC -- mA VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV --1.0 23 5 7 23 5 7 23 5 7--10 --100 100 1000 --100 --1000 --1.0 --10 --1000 IT05096 IT05097 --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --25°C Ta=75°C VCE= --2V IC / IB=20 Ta=75 25°C --25°C 25°C

No.7482-4/6 Embossed Taping Specifi cation 12A02CH-TL-E

No.7482-5/6 Outline Drawing Land Pattern Example 12A02CH-TL-E Mass (g) Unit 0.013 * For reference mm Unit: mm 0.6 2.4 0.95 0.95 1.4

PS No.7482-6/6 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.