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5 GHz to 11 GHz

GaAs, pHEMT, MMIC, Low Noise Amplifier Data Sheet HMC902LP3E Rev. E Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com

FEATURES

Low noise figure: 1.8 dB typical High gain: 19.5 dB High P1dB output power: 16 dBm typical Single supply: 3.5 V at 80 mA Output IP3: 28 dBm 50 Ω matched input/output Self biased with optional bias control for quiescent drain control (IDQ) reduction. 3 mm × 3 mm, 16-lead LFCSP: 9 mm²

APPLICATIONS

Point to multi point radios Military and space Test instrumentation FUNCTIONAL BLOCK DIAGRAM NIC NIC RFIN GND NIC NIC VDD2 VDD1 NIC NIC RFOUT GND GND NIC VGG1 VGG2 NIC HMC902LP3E PACKAGE BASE 16 15 14 13 65 7 8 14524-001 Figure 1. GENERAL DESCRIPTION The HMC902LP3E is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA), which is self biased with optional bias control for IDQ reduction. The HMC902LP3E is housed in a leadless 3 mm × 3 mm plastic surface mount package. The amplifier operates between 5 GHz and 11 GHz, providing 19.5 dB of small signal gain, 1.8 dB noise figure, and 28 dBm of output IP3, while requiring only 80 mA from a 3.5 V supply. The P1dB output power of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image reject mixers. The HMC902LP3E also features inputs/outputs that are dc blocked and internally matched to 50 Ω, making it ideal for high capacity microwave radios and C band, very small aperture terminal (VSAT) applications.

Rev. E | Page 2 of 13 TABLE OF CONTENTS

REVISION HISTORY

2/2018—Rev. D to Re v. E 10/2017—Rev. C to Rev. D This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. 7/2017—Rev. 03.0816 to Rev. C Changes to Features Section, Applications Section, General Added Theory of Operation Section and Figure 21;

Rev. E | Page 3 of 13 SPECIFICATIONS ELECTRICAL SPECIFICATIONS TA = 25°C, VDD1 = VDD2 = 3.5 V, IDQ = 80 mA. VGG1 = VGG2 = open for normal, self biased operation. Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 5 11 GHz GAIN1 17 19.5 dB Gain Variation over Temperature 0.01 dB/°C NOISE FIGURE1 NF 1.8 2.2 dB RETURN LOSS Input 12 dB Output 15 dB OUTPUT Output Power for 1 dB Compression1 P1dB 16 dBm Saturated Output Power1 PSAT 17.5 dBm Output Third-Order Intercept IP3 28 dBm SUPPLY CURRENT IDQ 80 110 mA VDD = 3.5 V, set VGG2 = 0 V, VGG1 = 0 V typical 1 Board loss removed from gain, power, and noise figure measurement.

Rev. E | Page 4 of 13 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Drain Bias Voltage 4.5 V Radio Frequency (RF) Input Power 10 dBm Gate Bias Voltages VGG1 −2 V to +0.2 V VGG2 −2 V to +0.2 V Channel Temperature 150°C Continuous Power Dissipation, PDISS (T = 85°C, Derate 7 mW/°C Above 85°C) 0.45 W Thermal Resistance (Channel to Ground Pad) 143.8°C/W Storage Temperature −65°C to +150°C Operating Temperature −40°C to +85°C Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) Class 1A, Passed 250 V Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION

Figure 21. Basic Schematic for HMC902LP3E The input and output impedances are sufficiently stable vs. matching compensation is required.

Rev. E | Page 10 of 13 APPLICATIONS INFORMATION The HMC902LP3E has VGG1 and VGG2 optional gate bias pins. When these pads are left open, the amplifier runs in self biased operation with typical IDQ = 80 mA. Figure 23 shows the basic connections for operating the HMC902LP3E in self biased operation mode. Both RFIN and RFOUT ports of HMC902LP3E have on-chip dc block capacitors, eliminating the need for external ac coupling capacitors. When using the optional VGG1 and VGG2 gate bias pins, use the recommended bias sequencing to prevent damage to the amplifier. The recommended bias sequence during power-up is as follows: 1. Connect to GND. 2. Set VGG1 and VGG2 to −2.0 V . 3. Set VDD1 and VDD2 to 3.5 V. 4. Increase VGG1 and VGG2 to achieve typical IDQ = 80 mA. 5. Apply the RF signal. The recommended bias sequence during power-down is as follows: 1. Turn off the RF signal. 2. Decrease VGG1 and VGG2 to −2.0 V to achieve typical IDQ = 0 mA. 3. Decrease VDD1 and VDD2 to 0 V. 4. Increase VGG1 and VGG2 to 0 V. The bias conditions previously listed (VDD = 3.5 V and IDQ = 80 mA) are the recommended operating points to achieve optimum performance. The data used in this data sheet was taken with the recommended bias conditions. When using the HMC902LP3E with different bias conditions, different performance than what is shown in the Typical Performance Characteristics section can result. Decreasing the VDD level has negligible effect on gain and NF performance, but reduces the P1dB, see Figure 18. For applications where the P1dB requirement is not stringent, the HMC902LP3E can be down biased to reduce power consumption.

directly to the ground plane similar to that shown in Figure 22. available from Analog Devices, Inc., upon request. Table 4. Bill of Materials for the Evaluation PCB

0.05 MAX

0.02 NOM

0.20 REF

0.20 MIN

PKG-004863 COMPLIANT WITH JEDEC STANDARDS MO-220-VEED-4. Figure 25. 16-Lead Lead Frame Chip Scale Package [LFCSP] 1 The HMC902LP3E and HMC902LP3ETR are RoHS Compliant Parts. registered trademarks are the property of their respective owners.