MA4E2501 MA-COM | Alldatasheet

Document overview

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Technical content

Features

  • Extremely Low Parasitic Capitance and Inductance
  • Extremely Small 0201 (600x300um) Footprint
  • Surface Mountable in Microwave Circuits , No Wirebonds Required
  • Rugged HMIC Construction with Polyimide Scratch Protection
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)
  • Lower Susceptibility to ESD Damage

Description

The MA4E2501L-1290 SurMount ™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a gla ss dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissi pation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechani cal performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The extremely small “ 0201 ” ou tline allows for Surface Mount placement and multi-functional polarity orientations. A C D E F G B Case Style 1290 dim. in mm min. max. min. max. A 0.023 0.025 0.575 0.625 B 0.011 0.013 0.275 0.325 C 0.004 0.008 0.102 0.203 D 0.006 0.008 0.150 0.200 E 0.007 0.009 0.175 0.225 F 0.006 0.008 0.150 0.200 G 0.009 0.011 0.220 0.270 Anode Cathode

0201 Footprint Silicon Schottky Diodes

Rev. V1 MA4E2501-1290 Series Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Elecrtrical Specifications @ 25°C Model Number Type Recommended Frequency Range Vf @ 1 mA ( mV ) Vb @ 10 uA ( V ) Ct @ 0V ( pF ) Rt Slope Resistance ( Vf1–Vf2 )/(10.5mA – 9.5mA ) ( Ω ) MA4E2501L- 1290 Low Barrier DC – 18 GHz 330 Max

300 Typ

3 Min

5 Typ

0.12 Max

0.10 Typ

10 Typical

14 Max

Rt is the dynamic slope resistance where Rt = Rs + Rj , where Rj =26 / Idc ( Idc is in mA) and Rs is the Ohmic Resistance.

Applications

The MA4E2501L-1290 SurMount Low Barrier Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitate s the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder. C Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize damage. The rugged construction of these SurMount devices allows the use of standard handling and die attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should insure th at abrasion and mechanical shock are minimized. Die Bonding Die attach for these devices is made simple through the use of surface mount die attach t echnology. Mounting pads are conveniently located on the bottom surface of these devices, and are opposite the active junc tion. The devices are well suited for high temperature solder attachment onto hard substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable for usage. Die attach with Electrically Conductive Silver Epoxy is Not Recommended. Absolute Maximum Parameter Value Operating Temperature -40° C to + 150° C Storage Temperature -40° C to + 150° C Forward Current 20 mA Reverse Voltage 5V RF C.W. Incident Power + 20 dBm RF & DC Dissipated Power 50 mW Exceeding any of these values may result in permanent damage Die Bonding For Hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Reflow the solder paste by applying Equal heat to the circuit at both die-mounting pads. The solder joint must Not be made one at a time, creating un- equal heat flow and thermal stre ss. Solder reflow should Not be performed by causing heat to flow through the top surface of the die. Since the HMIC gla ss is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is completed.

Rev. V1 MA4E2501-1290 Series Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MA4E2501L-1290 Low Barrier SPICE PARAMETERS Is ( nA ) Rs ( Ω ) N Cj0 ( pF ) M Ik ( mA ) Cjpar ( pF ) Vj ( V ) FC BV ( V ) IBV ( mA ) Typical Performance 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0 100 200 300 400 500 Frequency (MHz) Total Capacitance (pF) Circuit Mounting Dimensions (Inches) 0.007 0.010 0.008 0.007 0.010

Ordering Information

MA4E2501L-1290W Wafer on Frame MA4E2501L-1290 Die in Carrier MA4E2501L-1290T Tape/Reel