123NQ100PBF IRF | Alldatasheet

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Major Ratings and Characteristics IF(AV) Rectangular 120 A waveform VRRM 100 V IFSM @ tp = 5 μs sine 12800 A VF @ 120Apk, TJ=125°C 0.73 V TJ range - 55 to 175 °C Characteristics Values Units SCHOTTKY RECTIFIER 123NQ100PbF 120Amp Bulletin PD-21144 rev. A 10/06 www.irf.com Case Styles HALF-PAK (D-67) The 123NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. 175 °C T J operation Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free Description/ Features

Bulletin PD-21144 rev. A 10/06 www.irf.com IF(AV) Max. Average Forward Current 120 A 50% duty cycle @ TC = 133 °C, rectangular wave form * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive 12800 5 μs Sine or 3μs Rect. pulse Surge Current * See Fig. 7 1800 10ms Sine or 6ms Rect. pulse EAS Non-Repetitive Avalanche Energy 15 mJ T J = 25 °C, IAS = 5.5 Amps, L = 1 mH IAR Repetitive Avalanche Current 1 A Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA = 1.5 x VR typical Part number 123NQ100PbF VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Voltage Ratings Absolute Maximum Ratings Following any rated load condition and with rated VRRM applied Parameters 123NQ Units Conditions A (1) Pulse Width 500 μs VFM Max. Forward Voltage Drop 0.91 V @ 120A * See Fig. 1 (1) 1.26 V @ 240A

0.73 V @ 120A

0.9 V @ 240A

IRM Max. Reverse Leakage Current 3 mA T J = 25 °C * See Fig. 2 40 mA T J = 125 °C CT Max. Junction Capacitance 2650 pF V R = 5VDC (test signal range 100Khz to 1Mhz) 25°C LS Typical Series Inductance 7.0 nH From top of terminal hole to mounting plane dv/dt Max. Voltage Rate of Change 10000 V/ μs (Rated VR) TJ = 25 °C TJ = 125 °C VR = rated VR Parameters 123NQ Units Conditions Electrical Specifications TJ Max. Junction Temperature Range -55 to 175 °C Tstg Max. Storage Temperature Range -55 to 175 °C RthJC Max. Thermal Resistance Junction 0.38 °C/W DC operation * See Fig. 4 to Case RthCS Typical Thermal Resistance, Case to 0.05 °C/W Mounting surface , smooth and greased Heatsink wt Approximate Weight 30 (1.06) g (oz.) T Mounting Torque Min. 3 (26.5) Non-lubricated threads Max. 4 (35.4) Terminal Torque Min. 3.4 (30) Max. 5 (44.2) Case Style HALF PAK Module Thermal-Mechanical Specifications Parameters 123NQ Units Conditions Nm (Ibf-in) 100

Bulletin PD-21144 rev. A 10/06 www.irf.com Fig. 1 - Max. Forward Voltage Drop Characteristics Fig. 4 - Max. Thermal Impedance Z thJC Characteristics Forward Voltage Drop - VFM (V) Instantaneous Forward Current - I F (A) Reverse Current - I R (mA) Reverse Voltage - V R (V) Reverse Voltage - V R (V) Junction Capacitance - C T (pF) t1, Rectangular Pulse Duration (Seconds) Thermal Impedance Z thJC (°C/W) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 0.001 0.01 0.1 Single Pulse (Thermal Resistance) D = 0.20 D = 0.75 D = 0.50 D = 0.33 D = 0.25 Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 0.001 0.01 0.1 100 1000 0 2 04 06 08 0 1 0 0 150°C 125°C 100°C 75°C 50°C 25°C T = 175°CJ 100 1000 10000 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 T = 2 5° CJ 100 1000 Tj = 25°C Tj = 125°C Tj = 175°C

Bulletin PD-21144 rev. A 10/06 www.irf.com Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current FREE- WHEEL DIODE 40HF L40S02CU R R E NT MONIT OR HIGH-S PEED S WIT CHIRFP460 L DUT Rg = 25 o h m Vd = 25 Volt+ Average Forward Current - I F (AV) (A) Square Wave Pulse Duration - t p (microsec) Fig. 7 - Max. Non-Repetitive Surge Current Allowable Case Temperature (°C) Non-Repetitive Surge Current - I FSM (A) Fig. 6 - Forward Power Loss Characteristics Average Forward Current - I F (AV) (A) Average Power Loss (Watts) Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR 0 20 40 60 80 100 120 140 160 180 100 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS limit DC 0 30 60 90 120 150 180 100 110 120 130 140 150 160 170 180 DC Square wave (D=0.50) 80% rated Vr applied see note (2) 10 100 1000 10000 100 1000 10000 100000

Bulletin PD-21144 rev. A 10/06 www.irf.com HALF-PAK (D-67) Dimensions in millimeters and (inches) Outline Table Ordering Information Table Device Code 1 524 3 1 - Average Current Rating (x 10) 2 - Product Silicon Identification 3 - N = Not Isolated 4 - Q = Schottky Rectifier Diode 5 - Voltage Rating (100 = 100V) 6 - Lead-Free 12 3 N Q 100 PbF

Bulletin PD-21144 rev. A 10/06 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.