HMC753 AD | Alldatasheet
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Technical content
1 GHz to 11 GHz, GaAs, HEMT,
Rev. D Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 ©2015 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com
FEATURES
Noise figure: 1.5 dB at 4 GHz (see Figure 10) Gain 16.5 dB at 1 GHz to 6 GHz 14 dB at 6 GHz to 11 GHz Output power for 1 dB compression (P1dB): 18 dBm at 1 GHz to 6 GHz Supply voltage (V DD): 5 V at 55 mA Output third-order intercept (IP3): 30 dBm at 1 GHz to 6 GHz 50 Ω matched input/output (I/O) 24-lead lead frame chip scale package (LFCSP): 16 mm
APPLICATIONS
Point to multipoint radios Military and space Test instrumentation FUNCTIONAL BLOCK DIAGRAM GND GND RFIN GND GND GND GND
14 GND
15 GND
16 RFOUT
17 GND
18 GND
24 GND
Figure 1. GENERAL DESCRIPTION The HMC753 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise, wideband amplifier housed in a leadless, 4 mm × 4 mm LFCSP . The amplifier operates between 1 GHz and 11 GHz, providing up to 16.5 dB of small signal gain at 1 GHz to 6 GHz, a 1.5 dB noise figure at
4 GHz (see Figure 10), and an output IP3 of 30 dBm at 1 GHz to
6 GHz, while requiring only 55 mA from a 5 V supply. The P1dB output power of up to 18 dBm at 1 GHz to 6 GHz enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC753 also features I/Os that are dc blocked and internally matched to 50 Ω, making the device ideal for high capacity microwave radios or very small aperture terminal (VSAT) applications.
HMC753* Product Page Quick Links Last Content Update: 11/01/2016 Comparable Parts View a parametric search of comparable parts Evaluation Kits
- HMC753LP4E Evaluation Board Documentation Application Notes
- AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers
- Broadband Biasing of Amplifiers General Application Note
- MMIC Amplifier Biasing Procedure Application Note
- Thermal Management for Surface Mount Components General Application Note Data Sheet
- HMC753: 1 GHz to 11 GHz, GaAs, HEMT, MMIC Low Noise Amplifier Data Sheet Tools and Simulations
- HMC753 S-Parameter Reference Materials Quality Documentation
- Package/Assembly Qualification Test Report: LP4, LP4B, LP4C, LP4K (QTR: 2013-00487 REV: 04) Design Resources
- HMC753 Material Declaration
- PCN-PDN Information
- Quality And Reliability
- Symbols and Footprints Discussions View all HMC753 EngineerZone Discussions Sample and Buy Visit the product page to see pricing options Technical Support Submit a technical question or find your regional support number * This page was dynamically generated by Analog Devices, Inc. and inserted into this data sheet. Note: Dynamic changes to the content on this page does not constitute a change to the revision number of the product data sheet. This content may be frequently modified.
Rev. D | Page 2 of 13 TABLE OF CONTENTS
REVISION HISTORY
9/15—Rev. 03.0111 to Rev. D This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. Added Figure 3, Figure 4, Figure 5, Figure 6, and Figure 7; Added Applications Information Section, Figure 20, and Biasing
Rev. D | Page 3 of 13 SPECIFICATIONS ELECTRICAL SPECIFICATIONS TA = 25°C, VDD = 5 V , IDD = 55 mA. Table 1. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 1 6 GHz PERFORMANCE Gain 14 16.5 dB Gain Variation over Temperature 0.004 dB/°C Noise Figure 1.5 2 dB Input Return Loss 11 dB Output Return Loss 18 dB Output Power for 1 dB Compression (P1dB) 18 dBm Saturated Output Power (PSAT) 20 dBm Output Third Order Intercept (IP3) 30 dBm POWER SUPPLY Supply Current (IDD) 55 mA V DD = 5 V, set VGG2 = 1.5 V, VGG1 = −0.8 V typical Table 2. Parameter Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 6 11 GHz PERFORMANCE Gain 10 14 dB Gain Variation over Temperature 0.008 dB/°C Noise Figure 2 2.7 dB Input Return Loss 8 dB Output Return Loss 12 dB Output Power for 1 dB Compression (P1dB) 15 dBm Saturated Output Power (PSAT) 17 dBm Output Third Order Intercept (IP3) 28 dBm POWER SUPPLY Supply Current (IDD) 55 mA V DD = 5 V, set VGG2 = 1.5 V, VGG1 = −0.8 V typical
Rev. D | Page 4 of 13 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Drain Bias Voltage 6.0 V RF Input Power 12 dBm Gate Bias Voltage VGG1 −1 V to +0.3 V VGG2 0 V to 2.5 V Channel Temperature 180°C Continuous PDISS (TA) = 85°C), Derate 8.4 mW/°C Above 85°C 0.8 W Thermal Resistance (Channel to Die Bottom) 119°C/W Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +85°C ESD Sensitivity Human Body Model (HBM) Class 0, Passed 100 V Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION
- NC = NOT CONNECTED INTERNALLY. THESE PINS ARE
- EXPOSED PAD. THE EXPOSED PAD MUST BE
Figure 2. Pin Configuration Table 4. Pin Function Descriptions 3 RFIN RF Input. This pad is ac-coupled and matched to 50 Ω. Procedure section. See Figure 22 for required external components. 10 V DD Power Supply Voltage for the Amplifier. See Figure 22 for required external components. measured with these pins connected externally to RF/dc ground. 16 RFOUT RF Output. This pad is ac-coupled and matched to 50 Ω. EPAD Exposed Pad. The exposed pad must be connected to RF/dc ground.
to 6 GHz and 14 dB at the 6 GHz to 11 GHz frequency band. Figure 19. Wideband Low Noise Amplifier Circuit Architecture external matching circuitry. matching compensation is required. to the ground pins as well as to the backside exposed paddle. This ensures stable operation.
transistor (HEMT), low noise, wideband amplifier. Figure 20. Fundamental Cell Schematic printed circuit board (PCB) in its default configuration.
- Increase VGG1 to achieve a typical quiescent current (IDQ) =
- Decrease VGG1 to −1 V to achieve IDQ = 0 mA.
points recommended to optimize the overall performance. increased power consumption.
Table 5. List of Materials for Evaluation PCB 1 Reference this number when ordering the complete evaluation PCB. 2 Circuit board material: Rogers 4350 or Arlon 25FR.
0.02 NOM
0.20 REF
0.19 PIN 1
0.25 MIN
Figure 23. 24-Lead Lead Frame Chip Scale Package [LFCSP_VQ] 1 XXXX is the 4 digit lot number. registered trademarks are the property of their respective owners.